2013
DOI: 10.4028/www.scientific.net/amr.829.784
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Effect of Mn Dopant on Lattice Parameters and Band Gap Energy of Semiconductor ZnO Nanoparticles

Abstract: ZnO belongs to the II-VI semiconductor group with a direct band-gap of 3.2-3.37 eV in 300K and a high exciton binding energy of 60 meV. It has good transparency, high electron mobility, wide, and strong room-temperature luminescence. These properties have many applications in a wide area of emerging applications. Doping ZnO with the transition metals gives it magnetic property at room temperature hence making it multifunctional material, i.e. coexistence of magnetic, semiconducting and optical properties. The … Show more

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Cited by 9 publications
(1 citation statement)
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“…Zinc oxide (ZnO) is a wide direct bandgap semiconductor and has attracted various applications in recent days. ZnO finds various commercial applications including solar cells, [ 1 ] catalysis, [ 2 ] UV detectors, [ 3 ] transparent conducting material, [ 4 ] and a wide variety of sensors ranging from gas sensors to biosensors. [ 5 ] Numerous efforts have been devoted in the last decade, extending its applications to various emerging fields.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide (ZnO) is a wide direct bandgap semiconductor and has attracted various applications in recent days. ZnO finds various commercial applications including solar cells, [ 1 ] catalysis, [ 2 ] UV detectors, [ 3 ] transparent conducting material, [ 4 ] and a wide variety of sensors ranging from gas sensors to biosensors. [ 5 ] Numerous efforts have been devoted in the last decade, extending its applications to various emerging fields.…”
Section: Introductionmentioning
confidence: 99%