Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films

Reddy, K. M.; Hays, J.; Kundu, Susmita; Dua, Laxmikanta; Biswas, Prasanta Kumar; Wang, C.; Shutthanandan, V.; Engelhard, Mark H.; Mathew, Xavier; Punnoose, Alex

doi:10.1007/s10854-007-9277-6

Cited by 19 publications

(8 citation statements)

References 27 publications

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“…This implies that the sample possesses a strong paramagnetic component in addition to a weak ferromagnetic component, as seen in other DMO systems. 27 Initially, we attempted to fit the data using a purely paramagnetic relationship, however, this proved unsuccessful. Assuming that we have the coexistence of magnetic phases within this sample, we were able to model the magnetic susceptibility, ͑equivalent to M / H͒, using a modified Curie-Weiss relationship in combination with a standard mean-field model for a ferromagnet using the relation …”

Section: Resultsmentioning

confidence: 99%

Origin of magnetism in cobalt-doped indium tin oxide thin films

et al. 2010

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We report an x-ray absorption spectroscopy ͑XAS͒ and x-ray magnetic circular dichroism ͑XMCD͒ study of a 5.4 at. % Co-doped indium tin oxide ͑ITO͒ thin film shown to exhibit ferromagnetism beyond room temperature. The XAS spectra at the Co L 2,3 edge reveal pronounced multiplet features characteristic of divalent octahedrally coordinated Co 2+ ions. The results suggest that the Co 2+ ions are nonmetallic and substitute for the In site in ITO. Magnetic field and temperature-dependent XMCD spectra imply that the Co 2+ ions give a paramagnetic contribution to the overall ferromagnetic response both at the near-surface region and throughout the bulk of the films. No magnetic polarization was detected at the In M 2,3 or Sn M 2,3 edges. We therefore presume that the ferromagnetism observed is a result of the sp-d exchange interaction between the sp band of the host ITO and that of the localized d electrons of the transition-metal Co dopants.

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Section: Resultsmentioning

confidence: 99%

Origin of magnetism in cobalt-doped indium tin oxide thin films

et al. 2010

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“…The GL 30 deconvoluted peaks are illustrated in magenta (peaks at 486.1eV) and blue green (peaks at 496.7 eV). The deconvolution sum of the fit is shown in dashed red line (peaks at energies 486.4eV & 494.8 eV respectively).In the O 1s core level peak, the binding energy value lower than expected indicates that there are oxygen vacancies in the doped films[45]. In high resolution scan of O 1s peak (530.5 eV), a slight asymmetry in the form of a high energy shoulder, apparent in all the samples investigated, suggests the presence of multiple valence oxygen in the metal oxide.…”

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confidence: 91%

Spray deposited Mg-doped SnO2 thin film LPG sensor: XPS and EDX analysis in relation to deposition temperature and doping

Thomas¹,

Benoy²

2015

Journal of Alloys and Compounds

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“…Among the fabricated IO based thin films, ITO is the most widely used efficient TCO due to its low energy of defect formation towards enhancing greater electrical properties [34][35][36][37][38][39][40][41][42][43][44][45]. It is worthy to note that the optical properties of IO based thin films are primarily dependent upon post annealing temperature, film microstructure, film physical thickness, surface roughness, levels of impurities, defect (like oxygen vacancies) concentration and deposition parameters [16,17,[34][35][36][37][38][39][40][41][42][43][44][45]59]. Low absorption (0.04-1.10%) of incident light in visible region is a crucial factor for IO based TCOs.…”

Section: Properties Of Indium Oxide Based Nanomaterials 41 Indium Oxmentioning

confidence: 99%

“…Recently, the rapid increase in production of various electronic/ optoelectronic devices with ITO results a sharp increase in price of indium. In order to minimize the cost without sacrificing the functional properties, indium oxide based thin films have been fabricated [15][16][17]. In this respect, the formation of heterostructure with band gap engineering of IO or IO based nanomaterials improve its functional properties for advanced applications especially in transparent electronic devices and sensors [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Indium Oxide Based Nanomaterials: Fabrication Strategies, Properties, Applications, Challenges and Future Prospect

Khan¹,

Sarkar²,

Pal³

et al. 2021

Post-Transition Metals

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Nanostructured metal oxide semiconductors (MOS) in the form of thin film or bulk attract significant interest of materials researchers in both basic and applied sciences. Among these important MOSs, indium oxide (IO) is a valuable one due to its novel properties and wide range of applications in diversified fields. IO based nanostructured thin films possess excellent visible transparency, metal-like electrical conductivity and infrared reflectance properties. This chapter mainly highlights the synthesis strategies of IO based bulk nanomaterials with variable morphologies starting from spherical nanoparticles to nano-rods, nano-wires, nano-needles, nanopencils, nanopushpins etc. In addition, thin film deposition and periodic 1-dimensional (1D)/2-dimensional (2D) surface texturing techniques of IO based nanostructured thin films vis-à-vis their functional properties and applications have been discussed. The chapter covers a state-of-the-art survey on the fabrication strategies and recent advancement in the properties of IO based nanomaterials with their different areas of applications. Finally, the challenges and future prospect of IO based nanomaterials have been discussed briefly.

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Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films

Cited by 19 publications

References 27 publications

Origin of magnetism in cobalt-doped indium tin oxide thin films

Origin of magnetism in cobalt-doped indium tin oxide thin films

Spray deposited Mg-doped SnO2 thin film LPG sensor: XPS and EDX analysis in relation to deposition temperature and doping

Indium Oxide Based Nanomaterials: Fabrication Strategies, Properties, Applications, Challenges and Future Prospect

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