Effect of mobile space-charge on the small-signal admittance of DDR silicon IMPATTs at high current densities

Sridharan, M.; Roy, S. K.

doi:10.1016/0038-1101(80)90070-2

Cited by 11 publications

(8 citation statements)

References 4 publications

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“…With increasing bias current density from 8.6 × 10 7 to 9.2 × 10 7 A m −2 and corresponding bias current from 136.8 to 146.3 mA, distortion and nonlinearity is observed in the snapshots at each phase angles (ω t = 0, π /2, π , 3 π /2, 2 π ). This is due to the mobile space charge effect at higher current densities [19, 20]. The electric field snapshots exhibit depletion width modulation at large-signal level for 55% voltage modulation (Fig.…”

Section: Resultsmentioning

confidence: 99%

A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

Acharyya

Banerjee

2013

Int. j. microw. wirel. technol.

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A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz Silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities. A novel method is proposed in this paper to determine the parasitic series resistance of a millimeter-wave IMPATT device from large-signal electric field snapshots at different phase angles of a full cycle of steady-state oscillation. The method is based on the depletion width modulation of the device under a large-signal condition. The series resistance of the device is also obtained from the large-signal admittance characteristics at threshold frequency. The values of series resistance of a 35 GHz SDR IMPATT diode obtained from the proposed method and the large-signal admittance method are compared with experimentally reported values. The results show that the proposed method provides better and closer agreement with the experimental value.

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Section: Resultsmentioning

confidence: 99%

A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

Acharyya

Banerjee

2013

Int. j. microw. wirel. technol.

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“…At !t D /2, the electric field profiles for all junction temperatures become highly punched through due to the high electric field at the peak of the positive half cycle of the oscillation. It is interesting to note that, during the positive half cycle (0 6 !t 6 /2) the electric field profiles distort at higher junction temperatures (T j > 450 K) due to high space charge effect OE18; 19 . At the end of the positive half cycle (!t D ), the electric field profiles repeat themselves (i.e., at !t D 0 and !t D the electric field profiles are same).…”

Section: Large-signal Propertiesmentioning

confidence: 99%

Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Acharyya¹,

Banerjee²,

Banerjee³

2013

J. Semicond.

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The authors have developed a large-signal simulation technique extending an in-house small-signal simulation code for analyzing a 94 GHz double-drift region impact avalanche transit time device based on silicon with a non-sinusoidal voltage excitation and studied the effect of junction temperature between 300 and 550 K on the large-signal characteristics of the device for both continuous wave (CW) and pulsed modes of operation. Results show that the large-signal RF power output of the device in both CW and pulsed modes increases with the increase of voltage modulation factor up to 60%, but decreases sharply with further increase of voltage modulation factor for a particular junction temperature; while the same parameter increases with the increase of junction temperature for a particular voltage modulation factor. Heat sinks made of copper and type-IIA diamond are designed to carry out the steady-state and transient thermal analysis of the device operating in CW and pulsed modes respectively. Authors have adopted Olson's method to carry out the transient analysis of the device, which clearly establishes the superiority of type-IIA diamond over copper as the heat sink material of the device from the standpoint of the undesirable effect of frequency chirping due to thermal transients in the pulsed mode.

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“…The DC and high-frequency simulation method of MITATT devices presented in this paper is free from cut-down assumptions. The aforementioned method takes into account the realistic doping profiles and the effect of mobile space charge (Gibbons, 1973;Sridharan & Roy, 1978, 1980. The realistic electric field dependence of ionisation rates (α n , α p ) and drift velocities (v n , v p ) of charge carriers and other material parameters of silicon at realistic junction temperature of 500 K are taken from the experimental reports available in literature (Canali et al, 1971;Electronic Archive, 2012;Grant, 1973).…”

Section: Simulation Methods To Study the High-frequency Properties Of mentioning

confidence: 99%

“…The first fundamental device equation, i.e. Poisson's equation (Sze, 1981), taking into account the mobile space charge (Gibbons, 1973;Sridharan & Roy, 1978, 1980 in the space charge region of the device is given by:…”

Section: Simulation Methods To Study the DC Properties Of Impatt/mitatmentioning

confidence: 99%

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Effects of tunnelling current on millimetre-wave IMPATT devices

Acharyya

Mukherjee

Banerjee

2014

International Journal of Electronics

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In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed tunnelling and avalanche transit time mode is studied by taking into account the parasitic series resistance of the device. The results show that the parasitic resistance of mm-wave IMPATTs increases and consequently the power delivered by the device decreases due to the consequence of band-to-band tunnelling. The critical background doping concentration and operating frequency are found to be 5.0 × 10 23 m −3 and 260 GHz, respectively, above which the influence of tunnelling on the RF performance of the device becomes predominant.

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Effect of mobile space-charge on the small-signal admittance of DDR silicon IMPATTs at high current densities

Cited by 11 publications

References 4 publications

A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Effects of tunnelling current on millimetre-wave IMPATT devices

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