Effect of modulating field on photoreflectance simulated by electroreflectance

Abstract

Articles you may be interested inPhotoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations Rev. Sci. Instrum. 80, 096103 (2009); 10.1063/1.3213613 Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n +type doped GaAs Appl. Phys. Lett. 74, 475 (1999); 10.1063/1.123040 Micro-electroreflectance and photoreflectance characterization of the bias dependence of the quantum confined Stark effect in a fabricated 0.98 μm InGaAs/GaAs/InGaP laser Appl.Photoreflectance ͑PR͒ of surface-intrinsic-n ϩ (s-i-n ϩ ) type doped GaAs has been simulated by electroreflectance ͑ER͒. The simulated spectra of the s-i-n ϩ sample have exhibited many Franz-Keldysh oscillations, which enable the electric field ͑F͒ to be determined. It is known that F's determined from PR are subjected to photovoltaic effect and the measured F is close to F bi Ϫ␦F/2 when the modulating field, ␦FӶF bi , where F bi is the built-in field of the sample and ␦F is the modulating field. In this work, we have investigated the relation between the measured F and ␦F not only for the region where ␦FӶF bi holds, but also for a whole range of ␦F. In order to determine the magnitude of ␦F, we have used ER to simulate PR, that is, the measurements of ER under a forward bias, which is set to be equal to ␦F/2.

Temperature Dependence of Contactless Electroreflance Spectroscopy of C-Plane ZnO Bulk

“…The photovoltage, which was produced by electron-hole pairs generated by the pump beam, will oppose the original built-in voltage. Hence, the strength of electric field (F) in the depletion region is reduced and almost equal to F bi -δF/2 if δF ≪ F bi [9] , where δF is the strength of the modulating field induced by the pump beam and F bi is the built-in field of the sample. Nevertheless, the average field is F bi in the CER experiment because of applying an alternative modulating voltage on the sample.…”

A complex Fourier transformation study of the contactless electroreflectance of an undoped-n+GaAs structure

“…This approach neglects the light hole's contribution and the difference between the two non-flat electric fields. Recently, Fourier transformation (FT) has been used to analyse FKOs measured by PR [8][9][10][11], ER [12,13], CER [10] and piezoreflectance (PzR) [14]. Jin et al [15] utilized complex Fourier transformation (CFT), including real part, imaginary part and modulus of FT, to study FKOs in the UN + structure in PR experiments.…”