Effect of Moisture Stress on the Resistance of HfO<sub>2</sub>/TaO<sub>x</sub>-Based 8-Layer 3D Vertical Resistive Random Access Memory

Gao, Rui; Lei, Dengyun; He, Zhiyuan; Chen, Yiqiang; Huang, Yun; En, Yunfei; Xu, Xiaoxin; Zhang, Feng

doi:10.1109/led.2019.2953306

Cited by 11 publications

(13 citation statements)

References 8 publications

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“…The electroforming-free resistive switching behavior of Ti/MgF x /Pt can be attributed to the combination of ample initial fluoride-related defects in the amorphous MgF x layer and the presence of O–H group-related defects at the interface of the Ti/MgF x . The O–H group-related defects play significant roles in electroforming-free resistive switching by providing additional charges and facilities for forming anion vacancies in the top electrode/active layer interface [ 16 , 20 , 21 , 22 ]. This makes the devices overall less resistive than the other reported devices (~10 GΩ).…”

Section: Resultsmentioning

confidence: 99%

“…A small number of extrinsic defects is also present on the surface of the active layer in the form of O–H groups. As a result, the interface region has a different chemistry than the bulk MgF x for defect formation and ultimately produces stochastic defects [ 21 ]. All defects (intrinsic and extrinsic) are regarded as traps in Ti/MgF x /Pt devices.…”

Section: Resultsmentioning

confidence: 99%

“…However, far from the interface, the hopping mechanism remains unaffected in most of the bulk MgF x . Therefore, I LRS barely increases and remains constant with thickness variation [ 21 ]. As the positive voltage sweeps back, most of the injected electrons are free carriers due to the occupied traps and the device maintains LRS.…”

Section: Resultsmentioning

confidence: 99%

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Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

et al. 2021

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Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary switching mode at the interface between the MgFx and Ti layers is assisted by O–H group-related defects on the surface of the active layer.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

et al. 2021

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“…All the hydroxyl groups and CO 2 are easily removed from the amorphous MgF x thin film in the vacuum condition [29,31,32]. The availabilities of these weakly bonded groups heavily affect the surface chemistry of the amorphous MgF x active layer, as well as the Ti/MgF x interface [6,7,33,34].…”

Section: Mgf X Film Characteriazationsmentioning

confidence: 99%

“…The electroforming-free characteristics is caused by the combined effects of sufficient internal fluoride vacancies and the presence of a small amount of O-H groups at the surface of the amorphous MgF x active layer [5]. The O-H groups provide additional charges and facilitate the formation of anion vacancies at the interface of the Ti/MgF x [6,7,33,34]. A detailed study of the electroforming-free bipolar resistive switching behavior of the Ti/MgF x /Pt devices is reported separately [5].…”

Section: Electrical Characteristics Of Ti/mgf X /Pt Devicementioning

confidence: 99%

Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM

et al. 2022

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This study investigates switching characteristics of the magnesium fluoride (MgFx)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition of the amorphous MgFx active layer and Ti/MgFx interface region, which affects the overall device performance. The experimental results indicate that filament type resistive switching takes place at the interface of Ti/MgFx and trap-controlled space charge limited conduction (SCLC) mechanisms is dominant in both the low and high resistance states in the bulk MgFx layer. RRAM device performances at different operating ambiances are also altered by MgFx active layer treatments (air exposure and annealing). Devices show the better uniformity, stability, and a higher on/off current ratio in vacuum compared to an open-air environment. The Ti/MgFx/Pt memory devices have great potential for future vacuum electronic applications.

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Sub 20 nm‐Node LiNbO₃ Domain‐Wall Memory

Lian

Chai

Wang

et al. 2021

Adv Materials Technologies

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Conducting domain walls (DWs) induced by an in‐plane electric field applied to a mesa‐like cell fabricated at the surface of an insulating LiNbO3 single‐crystal film play a key role in the diode‐like DW memory. However, the lateral shrinking of the cell size below a 20 nm‐node technology becomes challenging due to the presence of interfacial layers with the finite thickness above 30 nm. In this work, 15 nm‐sized LiNbO3 cells are fabricated in high on/off current ratio of ≈102 on the SiO2/Si wafers immune to the interfacial‐layer effect, which can be operated below 5 V and also promising to meet the CMOS processing. It is found that the interfacial‐layer thickness reduces almost linearly with the shrinking cell size from 100 to 15 nm and the DW current increases by 25 times. The retention time of written information at +/−3 V is over 48 h, the domain switching time can approach 5 ns at 4 V in high switching endurance (≈109 cycles). These achievements imply the high storage density of a ferroelectric DW memory without the fundamental interfacial‐layer limit.

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Effect of Moisture Stress on the Resistance of HfO₂/TaO_x-Based 8-Layer 3D Vertical Resistive Random Access Memory

Cited by 11 publications

References 8 publications

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM

Sub 20 nm‐Node LiNbO₃ Domain‐Wall Memory

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Effect of Moisture Stress on the Resistance of HfO2/TaOx-Based 8-Layer 3D Vertical Resistive Random Access Memory

Cited by 11 publications

References 8 publications

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM

Sub 20 nm‐Node LiNbO3 Domain‐Wall Memory

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Product

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Effect of Moisture Stress on the Resistance of HfO₂/TaO_x-Based 8-Layer 3D Vertical Resistive Random Access Memory

Sub 20 nm‐Node LiNbO₃ Domain‐Wall Memory