Effect of molybdenum disulfide nanoribbon on quantum transport of graphene

Gao, Guanyi; Li, Zhongyao; Chen, Mingyan; Xie, Yuee; Wang, Yin

doi:10.1088/1361-648x/aa879f

Cited by 6 publications

(4 citation statements)

References 41 publications

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“…However, the effect is small for the model in which the transport is along the armchair direction. Therefore, in our FET model, the transport is along the armchair direction [36]. As shown in figure 3 Our results show that transmission coefficient is sensitive to the stacking sequence.…”

Section: Transport Propertymentioning

confidence: 81%

Toward barrier free contact to MoSe₂/WSe₂ heterojunctions using two-dimensional metal electrodes

Wang

Jin

et al. 2018

Nanotechnology

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In the design of electronic devices based on two-dimensional heterojunctions, the contact between electrodes and different surfaces of two-dimensional heterojunctions may produce different effects. Furthermore, metal–semiconductor contact plays an important role in modern devices. However, due to the Fermi level pinning effect (FLPE), it is difficult to tune the Schottky barrier height between common metals (e.g. Au, Ag, and Cu) and semiconductors. Fortunately, the FLPE becomes weak at the contact between the 2D metal and 2D semiconductor, due to the suppression of metal-induced gap states. Here, we choose monolayer NbS2 as the electrode to be in contact with the MoSe2/WSe2 bilayer. The interfacial properties as well as the stacking dependence are discussed based on the density functional theory, combined with the nonequilibrium Green’s functions. Two configurations are considered, i.e. the WSe2/MoSe2/NbS2 and MoSe2/WSe2/NbS2 stacking sequences. Our results show that barrier free contact can be formed in these 2D metal–semiconductor junctions (MSJs). In addition, the transport properties of the proposed devices are sensitive to the stacking sequence. The drain-source current versus bias voltage (I–V) curve exhibits a linear relationship for the WSe2/MoSe2/NbS2 system and its resistance is much lower than the MoSe2/WSe2/NbS2 MSJ. Detailed analysis reveals that the transport properties are governed by the electronic coupling between specific interlayer states. In WSe2/MoSe2/NbS2 configuration, large overlapping states are observed, which facilitate charge transfer and result in good ohmic contact. Our work may provide a theoretical guidance for the designing of next-generation ultrathin and flexible devices.

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Section: Transport Propertymentioning

confidence: 81%

Toward barrier free contact to MoSe₂/WSe₂ heterojunctions using two-dimensional metal electrodes

Wang

Jin

et al. 2018

Nanotechnology

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“…For the benefit of simulations, we constructed the twoprobe transport models based on the Cl-passivated A-GaBiCl 2 -NR with width of N = 17 (about 3.8 nm). The central scattering region contains nine unit cells of the A-GaBiCl 2 -NR, its size is about 7.2 nm and large enough to avoid the influence from leads [55]. In the center of the scattering region, different vacancies would be considered in the group of [GaBiCl 2 ].…”

Section: Resultsmentioning

confidence: 99%

Quasi-periodic scattering of topological edge states induced by the vacancies in chloridized gallium bismuthide nanoribbons

2023

J. Phys.: Condens. Matter

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The chloridized gallium bismuthide was predicted to be a two-dimensional topological insulator with large topological band gap. It may be beneﬁcial for achieving the quantum spin Hall eﬀect and its related applications at high temperatures. To better understand the quantum transport in topological nanoribbons, we investigated the eﬀect of vacancy on the quantum transport of topological edge states in the armchair chloridized gallium bismuthide nanoribbons by combining density functional theory and nonequilibrium Green’s function. The results suggest the vacancies at center are more likely to cause the scattering of topological edge states. The average scattering is insensitive to the enlargement of vacancy along the transport direction. More interestingly, the obvious scattering of topological edge states can only be found at some special energies, and these special energies are distributed quasi-periodically. The quasi-periodic scattering may be used as a kind of ﬁngerprint of vacancies. Our studies may be helpful for the application of topological nanoribbons.

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“…The length of the central region is about 5 nm, which is large enough to avoid the influence of the left and right leads. [ 46 ] The doping would directly lead to the changes of electrostatic potential. [ 47,48 ] Figure 2c–f shows the average electrostatic potential of the Sn‐doped Z‐SbH‐NRs along the transport direction ( x ‐direction).…”

Section: Resultsmentioning

confidence: 99%

Quantum Transport of Topological and Trivial Edge States in Sn‐Doped SbH Nanoribbons

Wu,

Wang,

2023

Physica Rapid Research Ltrs

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Although the transport of topological edge states may be insensitive to impurities, impurities may induce the interedge scattering and backscattering in topological nanoribbons due to the finite size effect. It may be interesting to compare the transport of topological edge states with that of trivial edge states in nanoribbons. Here, the quantum transport of edge states in the Sn‐doped SbH nanoribbons using the density functional theory combined with nonequilibrium Green's function method is studied. Both topological and trivial edge states can be found in the zigzag SbH nanoribbons. The impurity generates a higher barrier near the doping position and leads to the scattering of the states. From calculations, the transmission of topological edge states can be smaller than that of trivial edge states due to the antiresonance behavior. Compared with topological edge states, the transport of trivial edge states is more sensitive to the impurity position. Besides, the edge impurity is more likely to induce scattering for both topological and trivial edge states than the central impurity in narrow SbH nanoribbons, since the transport channels are limited to the edges. This study may be helpful for understanding the transport of edge states in nanoribbons.

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Effect of molybdenum disulfide nanoribbon on quantum transport of graphene

Cited by 6 publications

References 41 publications

Toward barrier free contact to MoSe₂/WSe₂ heterojunctions using two-dimensional metal electrodes

Toward barrier free contact to MoSe₂/WSe₂ heterojunctions using two-dimensional metal electrodes

Quasi-periodic scattering of topological edge states induced by the vacancies in chloridized gallium bismuthide nanoribbons

Quantum Transport of Topological and Trivial Edge States in Sn‐Doped SbH Nanoribbons

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Effect of molybdenum disulfide nanoribbon on quantum transport of graphene

Cited by 6 publications

References 41 publications

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Quasi-periodic scattering of topological edge states induced by the vacancies in chloridized gallium bismuthide nanoribbons

Quantum Transport of Topological and Trivial Edge States in Sn‐Doped SbH Nanoribbons

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Toward barrier free contact to MoSe₂/WSe₂ heterojunctions using two-dimensional metal electrodes

Toward barrier free contact to MoSe₂/WSe₂ heterojunctions using two-dimensional metal electrodes