In this paper, Pb(Zr 0.52 Ti 0.48 )O 3 thin films were successfully deposited on platinized silicon substrates and silicon substrates with PbTiO 3 seed layer by a modified sol-gel processing. The results show that the films were more likely to grow on platinum substrate, and the PbTiO 3 seed layer promoted the grain growth and influenced the crystal orientation of the films. With the annealing temperature and sintering time rising (from 600°C for 1 h to 700°C for 2 h) in the new method, the crystal orientation of PZT deposited on Pt substrate with PbTiO 3 seed layer changed from (100) to (111), and the grain size increased from dozens to hundreds of nanometer. Meanwhile, its ferroelectric and dielectric properties were greatly improved with 2P r from 10.78 to 42.12 lC/cm 2 and e r from 348 to 978, respectively.