Effect of Na doping on structural, optical, and dielectric properties of SnSe polycrystals

Nerella, Manjula; Suresh, M. Buchi; Bathulapalli, Sobha

doi:10.1007/s10854-020-05177-7

Cited by 9 publications

(4 citation statements)

References 51 publications

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“…Tin (II) chloride dihydrate (SnCl 2 .2H 2 O, 98%, MERCK), selenium powder (Se, 99.99%, Sigma-Aldrich), Potassium Hydroxide pellets (KOH, 84%, MERCK) and sodium hydroxide (NaOH, 98%, Sigma Aldrich) were used for the synthesis without any further purification. SnSe nanoplates were successfully synthesized using simple hydrothermal method route [11]. First a mixture of SnCl 2 .2H 2 O (1 mmol, 0.2253 gm) was dissolved in deionized water (40 ml).…”

Section: Methodsmentioning

confidence: 99%

CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications

Tyagi

Yadav

Wani

et al. 2022

2022 IEEE Region 10 Symposium (TENSYMP)

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Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using XRD, SEM and Raman spectroscopy which reveals that the films on glass are phase pure oriented SnSe while those on Alumina are polycrystalline SnSe with SnSe2 impurity phase. The optical properties of the films grown onto glass substrate were studied by UV-vis spectroscopy. The optical band gap calculated is 1 to 1.3 eV for indirect and direct transition in film deposited on glass substrates. The Arrhenius plots of the two films show very different thermal activations i.e. 0.088 eV for tin vacancy acceptor level close to valance band maxima in pure SnSe and 0.44 eV for mid gap selenium vacancies of SnSe2. Photoresponse was observed by illuminating the sample (Glass and alumina Substrate) using white and UV light (400 nm) for a fixed time pulses. The deposited onto Alumina substrate were found to show better photoresponse due to SnSe/SnSe2 p-n heterojunctions.

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Section: Methodsmentioning

confidence: 99%

CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications

Tyagi

Yadav

Wani

et al. 2022

2022 IEEE Region 10 Symposium (TENSYMP)

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“…[ 58 ] Bathulapalli et al observed the decreased band gap value of Na x Sn 1− x Se polycrystals with an increase in doping concentration, whereas the electrical conductivity increased with an increase in Na + concentration and temperature. [ 59 ] Chen et al found that K + could improve the electrical transport capabilities of SnSe by increasing the hole carrier concentration and decreasing the tin oxide yield, [ 60 ] which is the main cause of carrier migration. Xin et al [ 61 ] investigated the effects of K + doping on the electrical transport properties of SnSe.…”

Section: Electric Properties Of Doped Snsementioning

confidence: 99%

Enhancing Electrical Transport Performance of Polycrystalline Tin Selenide by Doping Different Elements

Wei,

Zhang,

Lin

et al. 2024

Physica Status Solidi (a)

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In the face of ever‐evolving energy and environmental challenges, tin selenide (SnSe) has garnered significant attention due to its outstanding thermoelectric performance. The article focuses on the research of easily accessible and highly practical polycrystalline SnSe thermoelectric materials, providing an overview of their crystal structure, band structure, and electrical transport performance. Compared with previous studies, this research classifies elements based on their own properties, mainly dividing them into alkali metals, transition metals, main group metals, halogens, and rare earth (Re) elements. The study systematically summarizes the experimental results of doping SnSe with these elements and analyzes the mechanisms by which different elements enhance the electrical transport performance and thermoelectric figure of merit of polycrystalline SnSe. The enhanced mechanism is mainly achieved by increasing the conductivity and Seebeck coefficient. Finally, a systematic analysis is conducted to identify the factors that improve electrical transport performance, and strategies for enhancing the electrical transport and thermoelectric properties of polycrystalline SnSe through precise doping techniques are discussed, with a prospect for their application in the future.

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“…The low value of the dielectric loss at high frequencies suggests the suitability of the material used in high-frequency-related devices [9,[31][32][33]. The behavior of exhibiting low values of dielectric constant and dielectric loss at high frequencies in a sample implies that the sample possesses greater optical quality with smaller defects and this parameter is crucial for different electrooptic devices and their applications [7,16,29,34]. The energy dissipation in the dielectric material can be described using loss tangent or dissipation factor (tan d) and it is calculated using the relation,…”

Section: Dielectric Studiesmentioning

confidence: 99%

“…There are a few reports that are available on the dielectric properties of undoped and doped SnSe till now [12][13][14][15]. In our earlier study, we reported the structural, optical, and dielectric properties of Na-doped SnSe [16]. However, to the best of our knowledge, no reports are available on AC conductivity and dielectric properties of K-doped SnSe in a broad temperature range.…”

Section: Introductionmentioning

confidence: 96%

Optical and dielectric properties of potassium-doped tin selenide polycrystals

Nerella¹,

Suresh

Bathulapalli³

2022

J Mater Sci: Mater Electron

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In our current study, we have investigated the effect of potassium doping on AC conductivity and the dielectric properties of tin selenide (SnSe). Potassiumdoped SnSe (K x Sn 1-x Se with x = 0-20 mol%) polycrystals were synthesized via hydrothermal method. The phase of the synthesized samples was confirmed to be single phase with orthorhombic structure as obtained by X-ray diffraction. The average crystallite size for all the K x Sn 1-x Se samples was calculated using the Debye-Scherrer formula and they were found to be decreased as potassium (K) concentration increased. Scanning electron microscope revealed plate-like morphology for all K x Sn 1-x Se samples. Transmission electron microscope studies at high resolution showed plate-like morphology which is connected with small nanorods for the K 0.20 Sn 0.80 Se. Optical studies were carried out using UV-Vis-NIR diffuse reflectance spectroscopy. The bandgap values were found to be decreased as K concentration is increased. Temperature-dependent dielectric studies were studied for all K x Sn 1-x Se samples. Correlated barrier hopping is responsible for the transport of charge carriers in the conduction mechanism. Electrical modulus studies reveal a non-Debye-type dielectric relaxation phenomenon. The results of dielectric studies specify the application of K-doped SnSe in frequency related and capacitive storage devices.

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Effect of Na doping on structural, optical, and dielectric properties of SnSe polycrystals

Cited by 9 publications

References 51 publications

CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications

CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications

Enhancing Electrical Transport Performance of Polycrystalline Tin Selenide by Doping Different Elements

Optical and dielectric properties of potassium-doped tin selenide polycrystals

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