Effect of nanophase concentration on the properties of metal-containing silicon–carbon nanocomposites

Баринов, А. Д.; Popov, A. I.; Presnyakov, M. Yu.

doi:10.1134/s0020168517070019

Cited by 10 publications

(2 citation statements)

References 3 publications

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“…In the case of the hopping mechanism, the electrical conductivity increases [54]. The response to gases was observed at temperatures of 150 • C and above.…”

Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 95%

“…In composite films, when the temperature increases, the interaction of copper oxide with the crystalline lattice of silicon carbide leads to the appearance of bond breaks, and the formation of the density of localized states occurs. In the case of the hopping mechanism, the electrical conductivity increases [54]. The response to gases was observed at temperatures of 150 °C and above.…”

Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 95%

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Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

et al. 2019

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In this study, we designed two types of gas-sensor chips with silicon–carbon film, doped with CuO, as the sensitive layer. The first type of gas-sensor chip consists of an Al2O3 substrate with a conductive chromium sublayer of ~10 nm thickness and 200 Ω/□ surface resistance, deposited by magnetron sputtering. The second type was fabricated via the electrochemical deposition of a silicon–carbon film onto a dielectric substrate with copper electrodes formed by photoelectrochemical etching. The gas sensors are sensitive to the presence of CO and CH4 impurities in the air at operating temperatures above 150 °C, and demonstrated p- (type-1) and n-type (type-2) conductivity. The type-1 gas sensor showed fast response and recovery time but low sensitivity, while the type-2 sensor was characterized by high sensitivity but longer response and recovery time. The silicon–carbon films were characterized by the presence of the hexagonal 6H SiC polytype with the impurities of the rhombohedral 15 R SiC phase. XRD analysis revealed the presence of a CuO phase.

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“…In the case of the hopping mechanism, the electrical conductivity increases [54]. The response to gases was observed at temperatures of 150 • C and above.…”

Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 95%

Section: Gas-sensor Characteristics With Ch 4 and Co Gasesmentioning

confidence: 95%

Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

et al. 2019

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The two-stage electrochemical deposition of a manganese-doped silicon-carbon film onto the silicon (100) substrate

Mikhailova

Grigoryev

Myasoedova

2019

J. Phys.: Conf. Ser.

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Manganese-doped silicon-carbon films with a thickness about 100 nm were deposited on a silicon substrate by using the electrochemical route from the methanol, hexamethyldisilazane and manganese sulfate (CH3OH, (CH3)3-Si-NH-Si-(CH3)3 (HMDSN), MnSO4·5H2O) solution. At the first stage, the current density decreased from 51 mA/cm2 to less than 37 mA/cm2 with increasing the deposition time and slightly increased at the second stage when manganese sulfate was added. The analysis derived from the X-ray diffraction pattern indicates that Mn atoms interact with Si atoms and form mainly Mn5Si2 and Mn22,6Si5,4C4 phases.

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Effect of Precursor on the Dielectric Properties of Diamond-Like Silicon–Carbon Films

et al. 2020

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Effect of nanophase concentration on the properties of metal-containing silicon–carbon nanocomposites

Cited by 10 publications

References 3 publications

Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

Fabrication of Gas-Sensor Chips Based on Silicon–Carbon Films Obtained by Electrochemical Deposition

The two-stage electrochemical deposition of a manganese-doped silicon-carbon film onto the silicon (100) substrate

Effect of Precursor on the Dielectric Properties of Diamond-Like Silicon–Carbon Films

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