than simply decorating the surface. [2][3][4] SIS allows transforming polymers into organic-inorganic hybrid materials: penetration and reaction of gaseous metal precursors into polymer, during SIS, permit to grow inorganic materials into polymeric films [5] in order to tune some of their features as their optical properties or improve their chemical etch resistance. [6][7][8][9] The SIS process is characterized by two factors: diffusion and entrapment of precursor molecules into the polymer matrix. The most direct method to promote their entrapment is the chemical reaction of penetrant molecules with polymer functional groups in combination with a secondary precursor (coreactant). [4] Thus, the number of reactive sites within the polymer film plays an important role in the determination of the amount of inorganic material grown in the film during the process. Moreover, differently from ALD, the self-terminating reactions are not restricted to the surface sites. Precursor molecules must diffuse into the polymeric film to reach the reactive sites that are distributed in the volume of the polymeric matrix. Consequently, diffusion plays a fundamental part in the kinetics of the infiltration process and needs to be monitored in real time. The most used in situ techniques for investigating the infiltration mechanism are in situ quartz crystal microbalance (QCM) measurements and in situ Fourier transform infrared (FTIR) spectroscopy. [10][11][12][13] In situ dynamic spectroscopic ellipsometry (SE) was recently validated as a valuable tool for real time investigation of the infiltration process in poly(methyl methacrylate) (PMMA) and polystyrene (PS) homopolymers. [14] In situ SE is a noninvasive optical technique frequently used in combination with ALD processes [15][16][17] and for studies of polymer films under several conditions. [18][19][20] During SIS process, in situ SE allows continuous acquisition of information about changes of thickness and refractive index (n) of polymer films without interrupting the process itself on a shorter time scale than in situ FTIR spectroscopic analysis and without the need of ad hoc samples as for QCM measurements. When SIS is performed into self-assembled block copolymers (BCP), [21] the selective binding of precursors to one domain only of BCPs offers the possibility to fabricate inorganic functional nanoarchitectures [22] or hard masks for lithography. [23] Removing polymers by O 2 plasma after Sequential infiltration synthesis (SIS) consists in a controlled sequence of metal organic precursors and coreactant vapor exposure cycles of polymer films. Two aspects characterize an SIS process: precursor molecule diffusion within the polymer matrix and precursor molecule entrapment into polymer films via chemical reaction. In this paper, SIS process for the alumina synthesis is investigated using trimethylaluminum (TMA) and H 2 O in thin films of poly(styrene-random-methyl methacrylate) (P(S-r-MMA)) with variable MMA content. The amount of alumina grown in the P(S-r-MMA) films linear...