Effect of NaOH solution concentration on the quality of controllable silicon nanowires array fabrication

Wang, Shanshan; Han, Jun Hyun; Song, Dongyu; Wang, Xinmei

doi:10.1088/2053-1591/ab669e

Cited by 2 publications

(2 citation statements)

References 27 publications

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“…Double-channel AAO membranes are utilized as a sacrificial layer for replicating Au films by selective chemical dissolution of AAO from ultra-thin Au-coated AAO membranes [ 22 ]. The AAO covered with Au films are gently immersed into a 1.875 mol/L NaOH solution for about 10 min [ 25 ]. The Au films, replicating the morphology of AAO, are separated from the AAO by chemical dissolution of AAO in a 1.875 mol/L NaOH solution at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays

Wang

Huang

Zhao

2022

Sensors

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The optical properties of silicon nanowire arrays (SiNWs) are closely related to surface morphology due to quantum effects and quantum confinement effects of the existing semiconductor nanocrystal. In order to explore the influence of the diameters and distribution density of nanowires on the light absorption in the visible to near infrared band, we report the highly efficient method of multiple replication of versatile homogeneous Au films from porous anodic aluminum oxide (AAO) membranes by ion sputtering as etching catalysts; the monocrystalline silicon is etched along the growth templates in a fixed proportion chemical solution to form homogeneous ordered arrays of different morphology and distributions on the surface. In this system, we demonstrate that the synthesized nanostructure arrays can be tuned to exhibit different optical characteristics in the test wavelength range by adjusting the structural parameters of AAO membranes.

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Section: Methodsmentioning

confidence: 99%

Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays

Wang

Huang

Zhao

2022

Sensors

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“…One approach is to form a layer of silver film on the surface of a polished silicon wafer by putting pretreated silicon wafers into AgNO 3 + HF (Sinopharm Chemical Reagent Co., Ltd., Shanghai, China) mixed solution [21,22]. Previous experiments [17,19,22,23] have demonstrated that the morphologies of SiNWs can be fabricated from monocrystalline silicon with a given orientation by changing the silver-plating time, the proportion of etching solution and the etching time. First, of the whole system, the redox process only takes place at the region of Ag membrane coverage, and the location of Ag particles determines the positioning of silicon wafers subjected to chemical corrosion.…”

Section: Deposition Of Noble Metal Filmsmentioning

confidence: 99%

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

Wang

Zhang

2023

Coatings

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We demonstrate two distinct experimental processes involving the large-area growth of ordered and disordered silicon nanowire arrays (SiNWs) on a p-type silicon substrate using the metal-assisted chemical etching method. The two processes are based on the etching of monocrystalline silicon wafers by randomly distributed Ag films and ultra-thin Au films with ordered nano-mesh arrays, respectively, wherein the growth of SiNWs is implemented using a specific proportion of a HF-containing solution at room temperature. In this study, the microstructural change mechanisms for the two morphologically different arrays before and after annealing were investigated using Raman spectra. The effects of various mechanisms on the observed Raman scattering peak’s deviation from symmetry, redshift and broadening were analyzed. The evolution of the unstable amorphous structures of nanoscale materials during the high-temperature annealing process was observed via high-resolution scanning electron microscope (SEM) observations. The scattering peak parameters determined from the Raman spectra led to conclusions concerning the various mechanisms by which high-temperature annealing influences the microstructures of the two morphologically different SiNWs fabricated on the p-type silicon substrate. Therefore, the deviation of SiNWs from the monocrystalline silicon scattering peak at 520.05 cm−1 when changing the diameter of the nanowire columns was calculated to further analyze the effect of thermal annealing on Raman characteristics.

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Effect of NaOH solution concentration on the quality of controllable silicon nanowires array fabrication

Cited by 2 publications

References 27 publications

Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays

Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

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