Effect of Nb, Ta and Sb Addition on Structure and Electrical Properties of PZT Ceramics

Promjun, Tanabat; Funsueb, Narit; Ngamjarurojana, Athipong

doi:10.1016/j.matpr.2019.06.188

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…The PZT ceramics modified with Y exhibits good dielectric and piezoelectric responses (PZT (52/48) + 2 at.% Y has ε max = 2100, P r = 26 µC/cm 2 ) [29]. Similarly, PZT modified with Ta and Sb exhibits the improved piezoelectric properties (PZT + 0.1 at.% Sb has ε max = 2663, P r = 1.26 µC/cm 2 , T C = 415.0 °C, whereas PZT + 0.1 at.% Ta has ε max = 5893, P r = 2.69 µC/cm 2 , T C = 388.5 °C) [30].…”

Section: Introductionmentioning

confidence: 98%

Influence of YTS addition on structural and electrical properties of PZT-based ceramics

Djoudi

Kahoul

Hamzioui

et al. 2021

PAC

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Perovskite solid solution (1-x)Pb(Zr0.52Ti0.48)O3-xY(Ta1/2Sb1/2)O3 ceramics (abbreviated as PZT-YTS, where x = 0, 0.01, 0.02, 0.03, 0.04 and 0.05) were synthesized by conventional solid state method. The phase structure, microstructure and corresponding electrical properties were studied. X-ray diffraction and Raman analyses show that tetragonal phase structure was obtained in all ceramics at room temperature. Scanning electron micrographs of the samples show uniform grain distribution and grain growth inhibition with the increase of doping content. The dielectric permittivity, dissipation factor, electromechanical coupling factor, Young modulus, mechanical quality factor, piezoelectric charge constant, actual density and piezoelectric voltage constant, for the ceramics with x = 0.04 were: ?r = 714.9, tan ? = 0.03345, KP = 0.635, Y = 10.528 ? 1010 N/m2, Qm = 622.254, d31 = 74.738 ? 10?12 C/N, ?a = 7.67 g/cm3 and g31 = 10.477 ? 10?3 m?V/N, respectively, which are optimal in comparison to other studied samples.

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Section: Introductionmentioning

confidence: 98%

Influence of YTS addition on structural and electrical properties of PZT-based ceramics

Djoudi

Kahoul

Hamzioui

et al. 2021

PAC

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show abstract

“…Chemical doping dominates the structural design of piezoelectric materials to form donor-type (soft) or acceptor-type (hard) characteristics. Doping high-valence ions (e.g., La 3+ , Nd 3+ , Sm 3+ , Nb 5+ and Ta 5+ ) always cause lead vacancies, which is beneficial to domain rotation during electric field polarization, and further improve dielectric, electromechanical, and piezoelectric properties, similar to softening ceramics [ 8 , 9 , 10 , 11 ]. Soft piezoelectric ceramics are characterized by high direct piezoelectric constant d 33 , strain rate S , significant remnant polarization P r , and low coercive field E c .…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric Response and Cycling Fatigue Resistance of Low-Temperature Sintered PZT-Based Ceramics

et al. 2023

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The preparation of low-cost multilayer piezoelectric devices requires using cheap internal electrodes between the dielectric layers. A general strategy is to reduce the sintering temperature Ts of the ceramic layer by sintering aids which can form a liquid phase. Here, 0.2 wt% Li2CO3 was added as a sintering aid to tailor the sinterability and piezoelectricity of the commercial PZT ceramics. As verified from experiments, the piezoelectric ceramics could be densified at a sintering temperature above 940 °C, suitable for co-firing with the cheap internal electrode. The optimized sintering temperature of 980 °C can be confirmed for the 0.2 wt% Li2CO3-modified PZT ceramics due to its high piezoelectric coefficient d33 ~ 701 pC/N, planar coupling factor kp ~ 66.7%, and a low mechanical quality factor Qm ~ 71 with a transition temperature of Tc ~ 226 °C, presenting the characteristics of typical soft piezoelectric ceramics. Moreover, both the potential piezoelectric strain ~0.13% under 20 kV/cm and the good cycling fatigue characteristic (>104 cycles) of the studied piezo compositions indicates strong competitiveness in the field of multilayer piezoelectric devices.

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Effect of SiNx Deposition Temperature on Performance Characteristics of AMR Angle Sensors

Luo,

Guo,

Tang

et al. 2024

2024 4th International Conference on Electronics, Circuits and Information Engineering (ECIE)

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Effect of Nb, Ta and Sb Addition on Structure and Electrical Properties of PZT Ceramics

Cited by 4 publications

References 8 publications

Influence of YTS addition on structural and electrical properties of PZT-based ceramics

Influence of YTS addition on structural and electrical properties of PZT-based ceramics

Piezoelectric Response and Cycling Fatigue Resistance of Low-Temperature Sintered PZT-Based Ceramics

Effect of SiNx Deposition Temperature on Performance Characteristics of AMR Angle Sensors

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