Effect of Neutron Flux on the Frequency Dependence of Permittivity of Nano Silicon Particles

Huseynov, Elchin; Garibli, Aydan

doi:10.1007/s12633-015-9381-9

Cited by 5 publications

(2 citation statements)

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“…Researchers around the world have focused on silicon solar cells in recent years [1][2][3][4]. By exploiting all the possibilities of semiconductor technology, it is necessary to find a compromise between cost reduction and efficiency increase.…”

Section: Introductionmentioning

confidence: 99%

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

Elfiky,

Eliwa,

Zahran

et al. 2023

Sohag Engineering Journal

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The process of 𝑝𝑛 junction formation is one of the fundamental steps in the manufacturing process of solar cells. It is the most important factor influencing the efficiency of solar cells. The aim of this research is to investigate the effect of different 𝑝-type (different boron concentrations) and 𝑛 − type (different phosphorus concentrations) resistivity on the efficiency of monocrystalline silicon solar cells. The solar cells were fabricated using p-type silicon doped in boron at concentrations ranging from 6.61 × 10 15 to 3.03 × 10 16 cm −3 and 𝑛 − type silicon doped in phosphorous at concentrations ranging from 5 × 10 19 to 10 21 cm −3 . Then, the effect of boron and phosphorus concentration on solar cell efficiency was investigated. It is found that an increase in the concentration of boron or phosphorus results in an increase in the recombination rate and thus a decrease in the efficiency of the solar cell by reducing the short-circuit current (𝐼 𝑠𝑐 ). The best efficiency of 18.59 % was obtained by using boron doped silicon with a resistivity of 2.16 Ω. cm , corresponding to 6.61 × 10 15 cm −3 boron concentration and 𝑛 − type sheet resistance 43.5 Ω/□ , corresponding to 10 20 cm −3 phosphorus concentration. As the study was carried out on a range of resistivities values (0.54 Ω. cm 𝑡𝑜 2.16 Ω. cm) , a range of sheet resistance (10 Ω/□ to 77 Ω/□).

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Section: Introductionmentioning

confidence: 99%

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

Elfiky,

Eliwa,

Zahran

et al. 2023

Sohag Engineering Journal

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“…16 Bulk silicon ingots (single crystals grown by the Czochralski method or the floating zone method), Si nanocrystals or thin Si films can be used in the NTD process. 7,8,[17][18][19][20] Electrodeposition from molten salts is a relatively low-cost, fast and simple method for the production of continuous micro-or nanofilms of silicon on various substrates. [21][22][23][24][25] It is possible to effectively influence the structure, morphology, composition, and thickness of electrochemical deposits by varying parameters electrolysis including current (or overpotential), melt composition, temperature, and electrodeposition time.…”

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confidence: 99%

Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K₂SiF₆ Melt

Исаков

Khvostov

Kinev

et al. 2020

J. Electrochem. Soc.

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Neutron transmutation doping (NTD) was applied to produce a stable isotope 31P admixture in thin silicon films electrodeposited on glassy carbon (GC) from the KF-KCl (2:1)—75 mol% KI—0.5 mol% K2SiF6 melt. The irradiation of samples with 5 and 15 μm silicon film thickness was carried out under the neutron flux density of 1.46 × 1012 cm–2 s–1 for 168 h at 318 K in the IVV-2M research reactor (RR). The irradiated samples were studied by methods of gamma-ray and mass spectrometry, scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDS). Impurities the activities of which reach levels above the minimum significant ones (MSA) were detected and identified. The presence of 31P atoms (∼1.1 × 1014 cm–3) in thin silicon films after the NTD process was confirmed. The specific electrical resistance of the irradiated samples was evaluated. Arrangements were defined to optimize the NTD process for obtaining acceptable results, including a higher 31P concentration and lower exposure time to achieve the minimum significant specific activity (MSSA).

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Neutron Irradiation Effects on the Temperature Dependencies of Electrical Conductivity of Silicon Carbide (3C-SiC) Nanoparticles

Huseynov

2017

Silicon

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Effect of Neutron Flux on the Frequency Dependence of Permittivity of Nano Silicon Particles

Cited by 5 publications

References 50 publications

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K₂SiF₆ Melt

Neutron Irradiation Effects on the Temperature Dependencies of Electrical Conductivity of Silicon Carbide (3C-SiC) Nanoparticles

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Effect of Neutron Flux on the Frequency Dependence of Permittivity of Nano Silicon Particles

Cited by 5 publications

References 50 publications

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

A Study on the Impact of PN-Junction Doping Concentration on the Efficiency of Monocrystalline Silicon Solar Cells

Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K2SiF6 Melt

Neutron Irradiation Effects on the Temperature Dependencies of Electrical Conductivity of Silicon Carbide (3C-SiC) Nanoparticles

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Neutron Transmutation Doping of Thin Silicon Films Electrodeposited from the KF-KCl-KI-K₂SiF₆ Melt