Effect of NH3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma

Yu, Xiaowei; Shi, Yi; Liu, H.; Zhang, Huang; Peng, Lin; Zhang, R.; Zheng, Yi

doi:10.1016/j.tsf.2007.05.046

Cited by 6 publications

(3 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dominant peaks present in the spectra are attributed to Si-N stretching mode located at $880 cm À1 , Si-N rocking mode located at $1190 cm À1 , Si-H stretching mode located at $2100 cm À1 , and N-H stretching mode located at $3300 cm À1 . 7,21 At a glimpse, one can notice that, with the decreased flow rate ratio of the silane to nitrogen gases X, the intensities of the Si-N stretching and rocking peaks as well as N-H stretching peak increase gradually while the intensity of the Si-H stretching peak tends to reduce. These observed phenomena suggest that more and more nitrogen atoms are incorporated into the a-SiN x :H films with the decreased flow rate ratio of the silane to nitrogen gases X, which agrees well with the results of the XPS analysis.…”

Section: Ftir Absorption Spectramentioning

confidence: 99%

Controlled-bandgap silicon nitride nanomaterials: deterministic nitrogenation in high-density plasmas

Cheng

Xu²,

Ostrikov

2010

J. Mater. Chem.

View full text Add to dashboard Cite

Section: Ftir Absorption Spectramentioning

confidence: 99%

Controlled-bandgap silicon nitride nanomaterials: deterministic nitrogenation in high-density plasmas

Cheng

Xu²,

Ostrikov

2010

J. Mater. Chem.

View full text Add to dashboard Cite

“…High density plasma sources, such as Electron Cyclotron Resonance (ECR) systems, have advantages over conventional low density Radio Frequency (RF) driven plasmas for thin film deposition. In the ECR sources, independent control of the plasma density and the energy of ions bombarding the substrate (using an additional RF source for substrate biasing) is available, allowing a high quality SiN x deposition [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications

et al. 2008

View full text Add to dashboard Cite

“…The results, after eliminating the interference effects by a baseline subtraction are shown in Fig. , which are attributed to Si-N stretching, N-H bending, Si-H stretching and N-H stretching bonds respectively[34,35,43,223,269,270] as indicated in the figure. It is readily observed that by increasing R, the Si-H stretching mode continuously increases, whereas the N-H stretching bond decreases.…”

mentioning

confidence: 99%

Growth and characterization of amorphous Si based multilayer structures

Kamyab¹

View full text Add to dashboard Cite

First and foremost I offer my sincerest gratitude to my supervisor, Associate Professor Rusli, who has supported me throughout my thesis with his encouragement and knowledge. I am grateful for being given the opportunity to be his PhD student and for the genuine support he provided me with at each and every step of this journey. Every meeting with Professor Rusli for me was a source of new ideas, hope and motivation to move forward, to face the unknown and to appreciate every challenge and every success that came to my way. My special thanks go to my co-supervisor Dr. Yu Mingbin for his patient guidance and valuable comments during my work in IME. I would also like to acknowledge all technical staff in IME and NTU, specifically Mr. M. Fauzi and Ms. Seet Lye Ping in Characterization lab. Many thanks to Dr. Yang Hong for her help in ellipsometry measurements in Republic Polytechnic and to Mr. Sun Yongshun for his friendliness and continuous assistance since the first day I joined NTU. Last but not least, I'd like to thank my dear friend Miss Yasaman Kiasat for her companionship, heartfelt comfort and wise hints all through these years.

show abstract

Effect of NH3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma

Cited by 6 publications

References 37 publications

Controlled-bandgap silicon nitride nanomaterials: deterministic nitrogenation in high-density plasmas

Controlled-bandgap silicon nitride nanomaterials: deterministic nitrogenation in high-density plasmas

Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications

Growth and characterization of amorphous Si based multilayer structures

Contact Info

Product

Resources

About