2024
DOI: 10.1088/2053-1583/ad3b0d
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Effect of niobium doping on excitonic dynamics in MoSe2

Wenjie Wang,
Yongsheng Wang,
Jiaqi He
et al.

Abstract: Transition metal dichalcogenides have emerged as attractive two-dimensional semiconductors for future electronic and optoelectronic applications. Their charge transport properties, such as conductivity and the type of charge carriers, can be effectively controlled by substitutional doping of the transition metal atoms. However, the effects of doping on the excitonic properties, particularly their dynamical properties, have been less studied. Using Nb-doped MoSe2 as a case study, we experimentally investigate t… Show more

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