Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE

Zhao, Yang; Wang, Hui; Wu, Guoguang; Jing, Qiang; Gao, Fangyuan; Li, Wancheng; Zhang, Baolin; Du, Guotong

doi:10.1016/j.vacuum.2014.09.014

Cited by 10 publications

(2 citation statements)

References 25 publications

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“…Due to the improvement of growth methods in recent years, InN films have been successfully grown on α-Al 2 O 3 and other heterogeneous substrates by magnetron sputtering [5], metal-organic chemical vapor deposition (MOCVD) [6][7][8][9], atomic layer deposition (ALD) [10], molecular beam epitaxy (MBE) [11], plasma-enhanced molecular beam epitaxy (PEMBE), and other methods [4,10,[12][13][14][15][16][17][18]. However, the heat dissipation performance of these substrates is poor; therefore, it is still difficult to select appropriate substrate materials for high frequency and power devices [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

2022

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In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate between InN film and the free-standing diamond substrate, the function of a buffer layer is to build a bridge between the substrate and film to reduce the lattice mismatch between them. Therefore, here, we study the performance impact of introducing an InN buffer layer at various deposition temperatures and explore the optimal buffer layer deposition temperature used to grow relatively high-quality InN films. The experimental results show that when an InN buffer layer is introduced at a deposition temperature of 100 °C, the growth direction of the InN film is perpendicular to the substrate with a high c-axis preferred orientation, the roughness of the surface is minimal, and the particle sizes are consistent with growth in the same direction. Additionally, the carrier mobility is highest, and the carrier concentration is lowest compared with other conditions.

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Section: Introductionmentioning

confidence: 99%

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

2022

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“…In fact, the surface nitridation technology of III-V semi-conductors [8-10] has been a critical way for to extend the emitting wavelength [11,12]. Yang Zhao et al showed a significant improvement of the crystalline qualities and surface morphologies and enhancement of the electrical and optical properties for InN films after nitridation [13].…”

Section: Introductionmentioning

confidence: 99%

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

Naceur

Choubani

Smiri

et al. 2020

Vacuum

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Evaluation of the impact of TMIn flow rate on the structural and optical properties of InN/ZnO heterojunctions using RF-MOMBE

Chen

Kuo

et al. 2017

Journal of Crystal Growth

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Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE

Cited by 10 publications

References 25 publications

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

Evaluation of the impact of TMIn flow rate on the structural and optical properties of InN/ZnO heterojunctions using RF-MOMBE

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