2006
DOI: 10.1143/jjap.45.4903
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Effect of Nitrogen Doping on Oxygen Precipitate Profiles in Czochralski Silicon Wafer

Abstract: The effect of nitrogen doping on the profiles of oxygen precipitates in Czochralski (CZ) silicon subjected to conventional annealing and rapid thermal annealing (RTA) has been investigated. After conventional high-low-high three-step annealing (1150 °C, 4 h + 650 °C, 128 h + 1050 °C, 16 h), it was found that an M-like oxygen precipitate profile existed in the cross section of a nitrogen-doped CZ silicon (NCZ-Si) wafer; however, this was not the case in conventional CZ silicon (CZ-Si) wafers. In contrast to con… Show more

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