2009
DOI: 10.1016/j.cap.2009.02.009
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Effect of nitrogen doping on nanomechanical and surface properties of silicon film

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Cited by 3 publications
(1 citation statement)
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“…Moreover, the inclusion of nitrogen atom impurity into the silicene structure leads to a change its physical-chemical properties. Thus, in work [6] it was shown that the thin films of silicon nitride used as dielectrics or as passivation layers in nanoelectronic devices have good mechanical and electrical properties. Furthermore, silicene is a promising material for use in thermoelectric, photoelectric, and optoelectronic devices, where the strength and stiffness play the decisive role [7].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the inclusion of nitrogen atom impurity into the silicene structure leads to a change its physical-chemical properties. Thus, in work [6] it was shown that the thin films of silicon nitride used as dielectrics or as passivation layers in nanoelectronic devices have good mechanical and electrical properties. Furthermore, silicene is a promising material for use in thermoelectric, photoelectric, and optoelectronic devices, where the strength and stiffness play the decisive role [7].…”
Section: Introductionmentioning
confidence: 99%