2021
DOI: 10.3390/coatings11091133
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Effect of Nitrogen Flow Ratio on Degradation Behaviors and Failure of Magnetron Sputter Deposited Tantalum Nitride

Abstract: A series of Tantalum Nitride (TaN) films under a reactive direct current magnetron sputtering method with a controlled total gas flow rate were prepared on aluminum oxide substrates. To find the nitrogen flow rate, which produced the minimum sheet resistance, TaN films deposited under a nitrogen gas flow ratio of 2.5%, 5%, 10%, 15%, 20%, 25% were characterized in terms of their structural and electrical properties. The optimum total gas flow rate was 60 sccm, revealing the lowest deviation of sheet resistance.… Show more

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Cited by 6 publications
(2 citation statements)
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“…An increasing nitrogen flow rate results in a decrease in the sputtering ability of argon ions, leading to a reduction in target power. As a result of decreased target power, plasma density decreases [19,20]. Consequently, plasma impedance rises, necessitating a higher cathode potential.…”
Section: Introductionmentioning
confidence: 99%
“…An increasing nitrogen flow rate results in a decrease in the sputtering ability of argon ions, leading to a reduction in target power. As a result of decreased target power, plasma density decreases [19,20]. Consequently, plasma impedance rises, necessitating a higher cathode potential.…”
Section: Introductionmentioning
confidence: 99%
“…TaN films have been used as diffusion barriers and as thin-film resistors in the electronic industries because of their highly stable structures and properties [2][3][4]. In addition, it has been reported that TaN consistently shows excellent mechanical and chemical properties [5,6], such as high oxidation-and wear-resistance, as well as better-than-average toughness.…”
Section: Introductionmentioning
confidence: 99%