Effect of nitrogen incorporation and oxygen vacancy on electronic structure and the absence of a gap state in HfSiO films

Jang, Moon Hyung; Jeong, Kwang Sik; Chung, Kwun Bum; Lee, Jin Woo; Lee, Myeung Hee; Cho, Mann Ho

doi:10.1016/j.susc.2012.04.010

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…Figure 9 shows the REELS spectra of the surface of as-received ALD thin film HfO 2 and the same film after Ar 1 sputtering. The band gap width for the as-received sample is 5.5 eV, which is in line with other reported experimental 132,194,195 and theoretical values. 195,196 As with TiO 2 and ZrO 2 , a wide defect band that appears after Ar 1 sputtering makes calculation of the band gap energy unreliable from this data.…”

Section: Resultssupporting

confidence: 91%

“…The band gap width for the as-received sample is 5.5 eV, which is in line with other reported experimental 132,194,195 and theoretical values. 195,196 As with TiO 2 and ZrO 2 , a wide defect band that appears after Ar 1 sputtering makes calculation of the band gap energy unreliable from this data. The similar shape of the data trace in the vicinity of the onset of the loss spectrum and beyond suggests that the band gap energy of the sputtered surface is not significantly different from the as-received surface.…”

Section: Resultssupporting

confidence: 91%

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Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

French

King

2013

J. Mater. Res.

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The continuation of Moore's law requires new materials at both extremes of the dielectric permittivity spectrum and an increased understanding of the fundamental mechanisms limiting their electrical reliability. To address the latter, reflection electron energy loss spectroscopy has been utilized to measure the band gap of various oxide-based low and high dielectric constant (k) materials of interest to the semiconductor industry. In situ Ar 1 sputtering has been additionally utilized to simulate process-induced defect states that are believed to contribute to electrical leakage, time-dependent dielectric breakdown, charge trapping, and other fixed-charge reliability issues in nano-electronic devices. It is observed that Ar 1 sputtering predominantly generates surface oxygen vacancy defects in the upper portion of the band gap for both low and high-k dielectric materials. These results are in agreement with numerous theoretical investigations of defects in low and high-k dielectric materials and models for mechanisms that limit their reliability.

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Section: Resultssupporting

confidence: 91%

Section: Resultssupporting

confidence: 91%

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

French

King

2013

J. Mater. Res.

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Reactive magnetron sputtered aluminum titanate high-к dielectric films for MIM devices

Addepalli,

Chandra,

Rao

et al. 2023

Appl. Phys. A

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Mid-wavelength infrared photo response and band alignment for sensitized PbSe thin films

Jang

Litwin

Yoo

et al. 2019

Journal of Applied Physics

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PbSe thin films were deposited using the chemical bath deposition method and sensitized with iodine for enhanced IR photoconductivity. After sensitization, PbSe films showed a high photoresponse of 44.7% in terms of resistance change in the midinfrared wavelength range (3–5 μm). To investigate the origin of high photoresponse in sensitized PbSe films, the bandgap, work function, and valence band maximum were measured by photoluminescence (PL) and X-ray photoelectron spectroscopy secondary cutoff and valence spectra. Infrared photoluminescence spectra showed a PbSe bandgap of 0.29 eV. Visible PL spectra showed a PbI2 bandgap of 2.41 eV. Work functions of as-grown PbSe and PbI2 in sensitized PbSe were determined to be 4.30 eV and 4.50 eV, respectively. An Ag/PbSe/Ag band diagram shows a measured barrier height of 0.25 eV at the PbSe/Ag interface due to Fermi level pinning. When the Ag/PbI2/PbSe/PbI2/Ag structure is biased and exposed to midwavelength infrared illumination, the electron flow is limited due to high barriers at the interfaces. Therefore, the only hole can flow after charge separation such that the electrical resistance of PbSe film is dramatically reduced. The measured bandgap, work function, and valence band maximum along with measured barrier height for metal contacts should help in providing the understanding of the charge transport mechanism in PbSe photoconductors.

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Effect of nitrogen incorporation and oxygen vacancy on electronic structure and the absence of a gap state in HfSiO films

Cited by 4 publications

References 20 publications

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

Reactive magnetron sputtered aluminum titanate high-к dielectric films for MIM devices

Mid-wavelength infrared photo response and band alignment for sensitized PbSe thin films

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