2014
DOI: 10.1002/pssc.201400058
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Effect of nitrogen mole fraction on hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering: transition between metallic and reactive sputtering

Abstract: The hydrogenated amorphous silicon nitride thin films are deposited by DC magnetron sputtering in argon, molecular hydrogen and nitrogen plasma mixture. The films are deposited at 150 °C and at 130 W sputtering power with wide range of nitrogen mole fraction. The plasma is characterized by the target voltage measurement. The samples are characterized by the optical transmission measurements and the physicochemical structure is studied by the FTIR absorption spectroscopy. When the nitrogen mole fraction increas… Show more

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“…At this frequency, the SiAH band is mainly composed of two components of frequencies 2175 and 2220 cm À1 ; they are respectively due to SiAH vibrations in the configurations: ''NA(SiH 2 )AN'' and ''NA(SiH)@2N''. We can notice that the two configurations do not contain SiASi bonds [22,23]. This shows that the deposited a-SiN x -H is stoichiometric or richer in nitrogen.…”
Section: Resultsmentioning
confidence: 83%
“…At this frequency, the SiAH band is mainly composed of two components of frequencies 2175 and 2220 cm À1 ; they are respectively due to SiAH vibrations in the configurations: ''NA(SiH 2 )AN'' and ''NA(SiH)@2N''. We can notice that the two configurations do not contain SiASi bonds [22,23]. This shows that the deposited a-SiN x -H is stoichiometric or richer in nitrogen.…”
Section: Resultsmentioning
confidence: 83%