Effect of nitrogen pressure on structure and optical properties of pulsed laser deposited BCN thin films

Stoichiometric controlling of boroncarbonitride thin films with using BN-C dual-targets

“…Carbon content in the films deposited from the dual-targets fell into a larger range (45.8 to 85.9%) than that of films from B 4 C target (26.4∼32.8%). 11 The B-C-N ternary diagram (Fig. 4) indicates the composition of the samples from BN-C dual-targets in this work, films from B 4 C target in our previous work 11 and films deposited via PVD 13,[25][26][27][28][29][30][31][32] and CVD 33,34 methods by other groups.…”

“…The angle of incidence of the X-ray beam was fixed to 1 • . More details and the scheme of PLD equipment on the experimental can be found in our previous studies 11,19 and Fig. 1.…”

“…6,7 The boroncarbonitrides are not only of academic interest but would be expected to exhibit novel properties. 6,[8][9][10] Actually, the properties of B x C y N z are strongly depended on band gap (E g ), 11 which would be a function of stoichiometry. Especially, carbon-rich B x C y N z exhibited good electrochemical 12 and mechanical 13 properties.…”

“…However, there are a very few studies mentioned stoichiometric controlling of that interesting material. 11,14,15 PLD (Pulsed Laser Deposition) technique has several advantages for controlling film composition and without introducing hydrogen in the films, as it normally occurs by chemical vapor deposition (CVD) methods. In addition, boron containing precursors are always explosive in chemical vapor deposition processes.…”

“…In addition, boron containing precursors are always explosive in chemical vapor deposition processes. [16][17][18] In our previous study, 11 we have prepared boroncarbonitride thin films by PLD method with using boron carbide (B 4 C) target in nitrogen atmosphere. Unfortunately, the films were carbon poor, and carbon content was changed in a narrow range of 26.4∼32.8% caused by the composition limitation of the boron carbide starting material.…”