Effect of nitrogen surface doping on the work function and field emission of hydrogenated amorphous carbon films

Capacitive storage at nitrogen doped amorphous carbon electrodes: structural and chemical effects of nitrogen incorporation

“…36 The observed increase of f upon N-modication is in agreement with experimental results by Wiggins-Camacho and Stevenson 12 obtained from nitrogenated and N-free carbon nanotubes. Nitrogen incorporation can result in both an increase 12,37 or a decrease 38,39 in the work function of carbons arising from changes to semiconducting properties (e.g. n-type doping) and from the creation of surface functional groups.…”

Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature

“…The field enhancement factor b can be estimated from the slope of the F-N plots, which is found to be 2770 for the ITO nanowire film and 320 for the flat surface ITO film, respectively. It is known that the reduced turn-on electric field and the large field enhancement factor can be caused by the lowering of the work function and the formation of a high aspect ratio structure [19]. According to previous works, the change in the In/Sn ratio and the oxygen content in the ITO material will cause the work function to change by less than 0.8 eV [20,21], which could be the reason for the enhanced field emission property.…”

Influence of p-doping hole transport layer on the performance of organic light-emitting devices

“…In addition, it has been reported [13,19] that the Fermi level moves toward the transport states with increasing doping. Since the work function of a material is the energy required to extract an electron from the Fermi energy level to a vacuum [20], it implies that the work function of the layer may also increase with increasing p-doping.…”