Effect of Non-polar Longitudinal Optical Phonons on Domain Wall Resistance in Diluted Magnetic Semiconductor Nanowires

Abstract

In the present paper, the effect of non-polar longitudinal optical phonons on domain wall resistance has been studied using the semiclassical approach. The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. We have determined the magnetoresistance of domain wall in nanowires based on diluted magnetic semiconductors. The modulation of the exchange and the impurity interactions by lattice vibrations, and the hole-phonon interaction are considered. The results indicate that the scattering role of phonons becomes significant by increasing temperature, which leads to the resistivity enhancement. It is also found that the magnetic impurities play an impressive role in enhancing the contribution of the domain wall in the resistance. In providing room temperature spintronics devices, understanding the effects of phonons and magnetic impurities on the domain wall resistance is crucial.

Magnetoresistance of non-180° domain wall in the presence of electron-photon interaction

“…The temperature dependence of the resistivity of DWs has been also studied. The results clarify that the positive contribution of DWs in increasing the resistivity is enhanced by increasing temperature [10][11][12]. In recent years, applying an external magnetic field or propagating a photon to control the DWR has been investigated [13][14][15].…”

“…From both scientific and technological points of view, understanding the resistance caused by DWs and determining the effect of different scattering sources on the DW resistance (DWR) are essential. For that reason, many research efforts have been made to understand the role of DW in resistivity [4][5][6][7][8][9][10][11][12][13][14][15]. Experiments on iron whiskers demonstrate that DWs are a source of electrical resistance [4].…”

“…In recent years, applying an external magnetic field or propagating a photon to control the DWR has been investigated [13][14][15]. It should be mentioned that most of the present studies [4][5][6][7][8][9][10][11][12][13][14][15] have focused on the ideal 180°DWs despite the fact that DWs with a magnetization rotation of less than 180°a ppear in artificial materials [16,17]. Meanwhile, realization of spintronic devices with improved functionality and performance requires controlling DW configurations and understanding their role in electronic transport.…”