Effect of non-uniform substrate doping profile on the electrical performance of through-silicon-via for low power application

Abstract

The effects of substrate doping density on the electrical performance of a TSV are investigated in this paper. The previously introduced lumped circuit model for TSV structure is used for a lightly-doped silicon structure. A new lumped circuit model based on the field distribution in a heavily-doped silicon substrate is proposed and its physical understanding is explained. Both circuit models for the lightly-doped and heavilydoped cases are validated using full-wave simulations up to 10 GHz.