Effect of nucleation sites on the growth and quality of single-crystal boron arsenide

Gamage, Geethal Amila; Chen, Ke; Chen, Gang; Tian, Fei; Ren, Zhifeng

doi:10.1016/j.mtphys.2019.100160

Cited by 14 publications

(6 citation statements)

References 35 publications

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“…Another key cluster appears to the term “ thermal conductivity ”. In most cases, thermal conductivity of BAs (boron arsenide) plays a significant role in the advancement of CS because their ability to conduct and dissipate heat is a critical parameter beyond high electric field strength and electron mobility [ 37 , 38 ]. Thus, thermal conductivity has become a substantial knowledge domain in the CS field.…”

Section: Results Of Scientometric Analysismentioning

confidence: 99%

Detecting the Knowledge Domains of Compound Semiconductors

et al. 2022

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The development of compound semiconductors (CS) has received extensive attention worldwide. This study aimed to detect and visualize CS knowledge domains for quantifying CS research patterns and emerging trends through a scientometric review based on the literature between 2011 and 2020 by using CiteSpace. The combined dataset of 24,622 bibliographic records were collected through topic searches and citation expansion to ensure adequate coverage of the field. While research in “solar cell” and “perovskite tandem” appears to be the two most distinctive knowledge domains in the CS field, research related to thermoelectric materials has grown at a respectable pace. Most notably, the deep connections between “thermoelectric material” and “III-Sb nanowire (NW)” research have been demonstrated. A rapid adaptation of black phosphorus (BP) field-effect transistors (FETs) and gallium nitride (GaN) transistors in the CS field is also apparent. Innovative strategies have focused on the opto-electronics with engineered functionalities, the design, synthesis and fabrication of perovskite tandem solar cells, the growing techniques of Sb-based III–V NWs, and the thermal conductivity of boron arsenide (BAs). This study revealed how the development trends and research areas in the CS field advance over time, which greatly help us to realize its knowledge domains.

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Section: Results Of Scientometric Analysismentioning

confidence: 99%

Detecting the Knowledge Domains of Compound Semiconductors

et al. 2022

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“…The BAs samples used in this work were synthesized by two research groups, each using the CVT method. The s1, s2, and s4 samples were grown with pure iodine (I 2 ) powder as the transport agent, and details of the growth procedure can be found in a prior report. , The s3 sample growth was based on a TeI 4 transport agent, as reported previously . The same sample was used in different measurements.…”

Section: Methodsmentioning

confidence: 99%

“…Among the challenges encountered in the experimental investigation of BAs is the difficulty in growing large-size bulk crystals. Recently, millimeter-sized BAs crystals have been synthesized by the chemical vapor transport (CVT) method. − However, the obtained crystals usually show a large variation in electrical and thermal properties due to the challenges in controlling crystal quality. The reported κ values of BAs crystals vary by 1 order of magnitude, from less than 100 W m –1 K –1 to above 1000 W m –1 K –1 . ,− In addition, BAs crystals usually exhibit p-type semiconducting behavior, with hole concentrations in the range of 10 18 –10 20 cm –3 . ,, Scanning transmission electron microscopy (STEM) combined with first-principles calculations attributed the origin of the reduced κ in the BAs samples to the formation of As B and B As antisite pairs, while impurities, such as I, O, Si, and Al, were not observed in corresponding electron energy loss spectrum (EELS) measurements .…”

Section: Introductionmentioning

confidence: 99%

Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Chen

et al. 2021

Chem. Mater.

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Cubic boron arsenide (BAs) is a promising compound semiconductor for thermal management applications due to its high thermal conductivity, exceeding 1000 W m–1 K–1 at room temperature in high-quality samples. However, the as-grown BAs crystals usually exhibit large variations in thermal and electronic transport properties. The origin of these large variations has thus far been inconclusive. Here, we investigate the effects of impurities on the thermal and electrical properties of BAs. Time-of-flight secondary ion mass spectrometry and electron probe microanalysis measurements reveal the presence of several impurities in BAs, including Si, C, O, H, Te, Na, and I. Some of these impurities, especially Si, C, and H, could serve as shallow acceptors, leading to the p-type conducting behavior commonly measured in BAs. The thermal conductivity and hole mobility are reduced more in the samples with higher impurity concentrations due to the enhanced impurity scattering of phonons and holes, respectively. First-principles calculations are used to determine the thermal conductivity reduction induced by different impurities. The calculated results confirm the experimental trends. The substitution of O for As leads to a large bond distortion resulting from the breaking of the T d symmetry, which yields unusually strong phonon scattering with a correspondingly large reduction in thermal conductivity. Our results offer useful insights into the impurity-sensitive transport properties of BAs.

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“…[4] Tian et al studied the heterogeneous nucleation and growth of BAs crystals using quartz and GaAs crystals as seed crystals and grew 7 mm-sized c-BAs single crystals on quartz substrates. [5,6] Preparation of single crystals of grown BAs by vacuum sealing tube and chemical vapor transport occurs. However, there are a large number of impurities in the sample, which are only pure enough in a small area.…”

mentioning

confidence: 99%

Systematic Investigations of the Structural, Elastic, and Thermal Properties of c‐BAs by First‐Principles Calculations

Chen

Yang

et al. 2023

Physica Status Solidi (b)

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The structure, elastic properties, and thermodynamic properties of cubic boron arsenide (c‐BAs) under high temperature and high pressure are studied based on first‐principles calculations. The obtained equilibrium structure and mechanical properties are in good agreement with other theoretical results. First, the phonon dispersion spectra at zero pressure and high pressure are calculated. The results show that c‐BAs is dynamically stable under pressure of 0–110 GPa. Second, the lattice constants, elastic constants, Young's modulus, bulk modulus, shear modulus, Poisson's ratio, B/G, sound velocity, and Debye temperature of c‐BAs under zero pressure and high pressure are calculated. c‐BAs are predicted to be unstable above 112.3 GPa in accordance with the elastic stability criterion. Furthermore, it is indicated by the calculated B/G ratio that c‐BAs is brittle at zero GPa and begins to tend to be ductile as pressure rises to 46.4 GPa. The calculated elastic anisotropy coefficients indicate that c‐BAs has elastic anisotropy. The thermodynamic properties of c‐BAs are investigated at high temperatures and pressures by combining generalized density function theory and the quasiharmonic Debye model. It is suggested by the calculated elastic and thermodynamic properties that c‐BAs can be used as candidate structures for the fabrication of efficient solar cells and thermoelectric materials.

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Effect of nucleation sites on the growth and quality of single-crystal boron arsenide

Cited by 14 publications

References 35 publications

Detecting the Knowledge Domains of Compound Semiconductors

Detecting the Knowledge Domains of Compound Semiconductors

Effects of Impurities on the Thermal and Electrical Transport Properties of Cubic Boron Arsenide

Systematic Investigations of the Structural, Elastic, and Thermal Properties of c‐BAs by First‐Principles Calculations

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