Effect of O₃ on Growth of Pt by Atomic Layer Deposition

Abstract

The growth characteristics of Pt deposited by atomic layer deposition (ALD) with methylcyclopentadienyltrimethylplatinum (MeCpPtMe3) and O3 are studied both experimentally and by modeling. The growth rate of Pt ALD using O3 is higher than that using either air or O2 counter reactants. In addition, a low deposition temperature of 150 °C for the deposition of metallic Pt using O3 is obtained. To investigate the role of O3 during initial growth, Pt is deposited on O3-pretreated SiO2 using air as the counter reactant. Pt deposited in this way on O3-pretreated SiO2 shows a rapid increase of surface coverage, which is similar to Pt ALD using O3 and different from Pt ALD using air on untreated SiO2. From the modeling study, it is found that pretreating the surface with O3 increases the steady state nucleation rate and decreases the nucleation incubation time on the SiO2 surface, the same phenomena which are believed to occur during the initial growth of ALD Pt using O3 counter reactant.

A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

“…The use of MeCpPtMe 3 and ozone as precursors at temperatures of 200-300 °C gave growth rates of 80 -110 pm/cycle. Very recently, improved rates of ALD growth (70 pm/cycle) of Pt have been reported using the same precursors on oxidized Si(0001) surfaces [25] [26]. Our work complements these results by including characterization of the electrocatalytic activity of the ALD Pt films on glassy carbon rotating disk electrodes.…”

“…Recent reports by S. F. Bent's and J. Denooven's groups of ALD Pt grown using MeCpPtMe 3 and ozone gave growth rates that differ from those reported herein. Bent's group [25] reported growth rates that varied from 25 to 70 pm/cycle for temperatures of 100 to 400 °C in a custom-made "showerhead" design ALD system. The growth rates decreased significantly for temperature below 200 °C.…”

Formation of Continuous Pt Films on the Graphite Surface by Atomic Layer Deposition with Reactive O3

“…In our 19 To assess the effect of temperature on the O 3 -based ALD of Pt on HOPG, the process was studied as a function of deposition temperature from 100 to 300°C. Pt was deposited using O 3 on HOPG for 400 cycles at 100, 150, and 300°C.…”

Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

“…However, in the case of metal ALD, since temperatures as high as 300°C are generally required to achieve successful deposition with the thermal energy of the precursor reactions, it is difficult to deposit conformal metal films onto thermally weak substrates using ALD, causing difficulties in a wide range of applications, including textile electronics. 14,15 To ensure successful metal ALD at low temperatures, ALD in which the precursor is combined with a plasma-generated radical as highly reactive counter reactants has been investigated; however, the high energy of the plasma causes degradation of substrates that do not have a high thermal stability and robustness under plasma conditions. [16][17][18][19] In addition, Dendooven et al 20 investigated Pt ALD at low temperatures around 100°C by using O 3 as a reactant with a (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe 3 ) precursor.…”