Effect of O2 plasma treatment on physical, electrical, and reliability characteristics of low dielectric constant materials

Cheng, Yi-Lung; Lin, Bing-Hong; Huang, Syuan-Wei

doi:10.1016/j.tsf.2014.07.069

Cited by 15 publications

(14 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During the deposition, the temperature, pressure, and power were 300 • C, 1.0 × 10 4 Pa, and 600 W, respectively. After deposition, ultraviolet (UV) thermal-assisted curing at 350 • C was performed for 300 s to remove the organic porogen to form the pores in the film [17]. This produced a porous low-k dielectric film with a SiOCH composition.…”

Section: Methodsmentioning

confidence: 99%

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

et al. 2020

Self Cite

View full text Add to dashboard Cite

In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 • C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

show abstract

Section: Methodsmentioning

confidence: 99%

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…Plasma-induced damage on the porous low-k dielectric materials depends on the porosity, the used plasma reactors, power, and gas [72][73][74][75][76]. Therefore, for porous low-k dielectric materials that are irradiated under a plasma with higher density, inductively coupling plasma (ICP) reactor, or O 2 plasma, more damage on low-k dielectrics is expected.…”

Section: Plasma-induced Damagementioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

Self Cite

View full text Add to dashboard Cite

To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter-and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.

show abstract

“…The damage is more minor due to the absence of ion Plasma Science and Technology -Basic Fundamentals and Modern Applications bombardment. The detrimental effect on the low-k dielectrics is caused by photoresist process because oxygen (O 2 ) is widely used as plasma gas due to high reactivity of O radicals [38,39].…”

Section: Low-k Plasma Damage During Interconnects Fabricationmentioning

confidence: 99%

“…In this section, the results of plasma damage on the low-k dielectrics from our group's investigation are reported in terms of the effects on the electrical characterization and reliability. The experimental detail deposition can be found elsewhere [39,[48][49][50]. Figure 7 shows the variation in the k value of a porous low-k dielectric after O 2 plasma treatments with various plasma conditions (power, treatment time, and O 2 flow rate).…”

Section: Plasma Damage On the Electrical Characterization And Reliabimentioning

confidence: 99%

Plasma Damage on Low-k Dielectric Materials

Cheng¹,

Lee²,

Haung³

2019

Plasma Science and Technology - Basic Fundamentals and Modern Applications

Self Cite

View full text Add to dashboard Cite

Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for lowk dielectric materials. This is called "plasma damage" on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

show abstract

Effect of O2 plasma treatment on physical, electrical, and reliability characteristics of low dielectric constant materials

Cited by 15 publications

References 21 publications

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Plasma Damage on Low-k Dielectric Materials

Contact Info

Product

Resources

About