We report here the preparation and characterization of an optoelectronic memory device based on a single layer of organic thin film ͑ϳ0.9 m thick͒ of zinc octakis͑-decoxyethyl͒porphyrin, sandwiched between two crossed indium tin oxide ͑ITO͒ arrays. The ITO lines in the array were 5 m wide and were separated from each other by a 5 m gap. Data ͑in the form of an electric charge͒ could be independently stored at and retrieved from an intersection of the crossed ITO lines with irradiation. Each intersection defined one memory pixel (5 ϫ 5 m) and there was no cross talk with nearby pixels under the test conditions, clearly demonstrating its potential application as an information storage device using a molecular thin film.Zinc octakis͑-decoxyethyl͒porphyrin ͑ZnODEP͒ is a flat molecule with eight long hydrocarbon chains. 1 In the crystal, molecules are regularly stacked to form individual columns and the nonionic alkyl tails serve as an insulating coating, leading to a bundle of electrically insulated one-dimensional molecular ''wires.'' 1 Even within the same molecular column, the intermolecule separation is ϳ4 Å, 1 significantly larger than those in inorganic substances. This produces an intrinsic characteristic of a crystal structure consisting of discrete molecules that can be considered an ''orientated molecular gas.'' 2,3 This structure has an inherent advantage over inorganic materials as a medium for high-density charge trapping and, therefore, information storage, because charge carriers are localized on individual molecules and can be trapped for long times on structural defects or impurity sites. [2][3][4] In principle, the theoretical size of one memory element could be as small as a single molecular column representing the ultimate density in data storage. 5, 6 We have demonstrated previously that an individual pixel could be as small as a few tens of nanometers with a configuration of a sharp scanning tunneling microscopy ͑STM͒ tip/organic film/indium tin oxide ͑ITO͒. 5,7 While this tip-type movable structure is simple and convenient for testing the possibility of ultrahigh density data storage, it is not useful for most memory applications where a fixed rigid device is more desirable. Nor is it useful in examining cross talk among different pixels. This led us to the present study of an alternative configuration as shown in Fig. 1, in which each 5 m wide ITO line served as an independent electrode and was individually externally addressable.When a bias voltage was applied to two of the crossed ITO fingers ͑such as column 3 and row D͒, the organic film was subjected to the electric field at only that particular intersection ͑desig-nated as pixel 3D͒. Thus, Fig. 1 illustrates a total of 25 memory elements. Figure 2a shows the current as a function of bias voltage from pixel 3D with and without irradiation. The dark current is negligible over the potential range of Ϫ1 to ϩ1 V. Essentially the same result was seen with the other pixels. Note that in this and other measurements discussed below, the whole fi...