Effect of Oxygen on the Electrical Conductivity of Pt-Contacted α-Ga₂O₃/ε(κ)-Ga₂O₃ MSM Structures on Patterned Sapphire Substrates

Study on the chemical synthesis process of Ga2O3 nanowires and their ultraviolet light sensor properties

“…49,52 It is also known that oxygen adsorption has a great influence on electrical properties of ε-Ga 2 O 3 . 55,56 Under dark conditions, free electrons are bound by the adsorption of oxygen in the atmosphere (O 2 − (ad)), and a depletion layer is generated on the surface of the nanowires. Under UV irradiation, the generated holes move to the surface of the nanowires to release oxygen (O 2 (g)) and reduce the thickness of the depletion layer.…”

Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures

“…Gallium oxide, a wide-bandgap semiconductor (E g = 4.4-5.3 eV), exhibits unique properties that make it well suited for high-performance ultraviolet sensors [3,4]. This compound has attracted considerable attention in the field of optoelectronics due to its wide bandgap energy, excellent thermal stability, and robust chemical properties [5,6]. Ultraviolet detectors (UVDs) based on gallium oxide have found a wide range of applications in areas such as environmental monitoring, flame detection, communication systems, biomedical applications, etc.…”

High sensitivity of halide vapor phase epitaxy grown indium oxide films to ammonia

“…It is known that HVPE is an inexpensive method that allows to achieve very high growth rates, and in some cases it allows to obtain a developed surface, which is especially important in the case of gas sensors [22]. In addition, there are a large number of papers on the production of films of metal oxide semiconductors (MOS) [3,[19][20][21][22][23][24][25][26][27][28] of high structural quality by the HVPE method.…”