Effect of Oxygen Pressure on the Oxidation Rate of Cobalt

Bridges, D.W.; Baur, John P.; Fassell, W.M.

doi:10.1149/1.2430173

Cited by 25 publications

(3 citation statements)

References 4 publications

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“…This route can be an optimal choice when a metal diffusion barrier is required (e.g., Cu interconnects). Route B is arguably more elegant since the MOF precursor layer is formed by the controlled oxidation of the metal line surface 41–43 . Since this route results in the direct contact between the metal and the MOF, low metal ion diffusion through the dielectric is needed to avoid electrical reliability issues.…”

Section: Introductionmentioning

confidence: 99%

Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

et al. 2019

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The performance of modern chips is strongly related to the multi-layer interconnect structure that interfaces the semiconductor layer with the outside world. The resulting demand to continuously reduce the k-value of the dielectric in these interconnects creates multiple integration challenges and encourages the search for novel materials. Here we report a strategy for the integration of metal-organic frameworks (MOFs) as gap-filling low-k dielectrics in advanced on-chip interconnects. The method relies on the selective conversion of purpose-grown or native metal-oxide films on the metal interconnect lines into MOFs by exposure to organic linker vapor. The proposed strategy is validated for thin films of the zeolitic imidazolate frameworks ZIF-8 and ZIF-67, formed in 2-methylimidazole vapor from ALD ZnO and native CoO x , respectively. Both materials show a Young’s modulus and dielectric constant comparable to state-of-the-art porous organosilica dielectrics. Moreover, the fast nucleation and volume expansion accompanying the oxide-to-MOF conversion enable uniform growth and gap-filling of narrow trenches, as demonstrated for 45 nm half-pitch fork-fork capacitors.

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Section: Introductionmentioning

confidence: 99%

Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

et al. 2019

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“…From the studies on the chemical diffusion [6,12,13,17,23,27,28,32,[47][48][49][50][51][52][53][54][55] and cobalt self-diffusion [3,16,[56][57][58][59], mostly performed at higher oxygen pressures, it transpires that the matter transport occurs mainly via single-ionized cobalt vacancies. A similar conclusion can be derived from the relation between the defect concentration, the diffusion coefficients, and the parabolic rate constants of cobalt oxidation [60][61][62][63][64]. However, it has been concluded that the total concentration of cobalt vacancies is higher than that resulting from the studies on the deviation from the stoichiometry [14,64].…”

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confidence: 57%

Point defect diagrams for pure and doped cobalt oxide $$ {\hbox{C}}{{\hbox{o}}_{{{1} - }}}_{\delta }{\hbox{O}} $$ in the temperature range of 1,173–1,673 K (I)

Stokłosa

2011

Ionics

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The point defect diagram in non-stoichiometric cobalt oxide Co 1Àd O, pure and doped with M 3+ and M + metal ions, taking into consideration all of the types of defects in the cation sublattice are presented in this work. A new method was used for the calculations of the diagrams. This method is based on the derived relations between the standard Gibbs energies of formation of cobalt vacancies and the intrinsic ionic and electronic defects; it also uses the experimental values of the deviation from the stoichiometry. The calculations were performed using the results of studies obtained by many authors in the temperature range of 1,173-1,673 K.

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“…The appearance of such a zone in cobalt monoxide scales is illustrated in Fig. 3, where it appears to be distinctly more porous than the outer columnar regions of scale, a fact which has been commented on by many authors (9)(10)(11). However, it is always difficult to be sure to what extent such apparent porosity is merely a reflection on the metallographic damage sustained to sutn a fine equiaxed structure during polishing; the detailed structure of the section of an oxide which shows clearly the columnar and equiaxed structure of the two zones in nickel oxide is well illustrated by the recently published photomicrographs of Rhinesand Wolf (12), see Fig.…”

Section: Microstructura1 Features Ofmentioning

confidence: 74%

Microstructural Features of Scales and Their Likely Influence on Creep Behaviour

Strafford¹

1972

Materials & Corrosion

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The microstructural features of scales as formed during the high temperature corrosion of metals can vary considerably. Apart from the obvious differences between scales derived from different metals, even with a given metal the microstructure of the scale is affected by factors such as metal purity and the conditions of exposure, namely the duration and temperature of oxidation and the partial pressure of the oxidant in the atmosphere. In particular variations in grain size and morphology, and in the degree and morphology, and in the degree and nature of porosity can occur; in addition in some systems precipitation of a second phase of variable morphology can take place. Some of these differing structural features in scales are discussed and illustrated. It is suggested that such variations in microstructure will considerably affect the mechanical properties of the scales in which they occur. In general few data concerning mechanical properties, in particular plastic deformation characteristics of scales have been published; furthermore little attempt has been made to assess the possible role of such variations in structure. Rather more information is, however, available from the field of ceramics, and this knowledge is critically reviewed. The usefulness and limitations of such information in relation to the interpretation of the creep behaviour of cobalt monoxide scales is illustrated.

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Effect of Oxygen Pressure on the Oxidation Rate of Cobalt

Cited by 25 publications

References 4 publications

Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

Point defect diagrams for pure and doped cobalt oxide $$ {\hbox{C}}{{\hbox{o}}_{{{1} - }}}_{\delta }{\hbox{O}} $$ in the temperature range of 1,173–1,673 K (I)

Microstructural Features of Scales and Their Likely Influence on Creep Behaviour

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