Effect of ozone treatment on the optical and electrical properties of HfSiO thin films

Geng, Yanquan; Yang, Wen; Zhu, Shang-Bin; Zhang, Yuan; Sun, Qizhen; Lu, Hongliang; Zhang, David Wei

doi:10.1007/s00339-013-8110-8

Cited by 2 publications

(1 citation statement)

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“…Among the potential candidates, hafnium silicate was chosen as the first generation of high- k dielectrics for its high dielectric constant and excellent thermal stability [8,9]. Compared to other deposition methods used for hafnium silicate film fabrication, atomic layer deposition (ALD) has the advantages of precise film thickness and stoichiometry control, which are of great significance to optimize the material especially for the shrinking devices [10-15].…”

Section: Introductionmentioning

confidence: 99%

Optical properties and bandgap evolution of ALD HfSiOx films

et al. 2015

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Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental results show that optical constants and bandgap of the hafnium silicate films can be tuned by the film composition, and a nonlinear change behavior of bandgap with SiO2 fraction was observed. This phenomenon mainly originates from the intermixture of d-state electrons in HfO2 and Si-O antibonding states in SiO2.

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