Effect of P+ ions on the microstructure and the nature of the formed silicides in the Cr/Si system

Mirouh, K.; Bouabellou, A.; Halimi, R.; Karaali, A.; Mosser, A.; Ehret, G.

doi:10.1016/j.mseb.2004.07.030

Cited by 1 publication

(2 citation statements)

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“…In accordance with its containing different amounts of Si electronic components can satisfy a wide range of required resistor values. [1][2][3] Many refractory metals of silicides offer several desirable physical and chemical properties, such as high melting point, good oxidation resistance, high strength and excellent creep resistance at elevated temperatures. 4,5 Furthermore, chromium silicides are mainly applied to the thin film resistors and heaters so that significant thermal energy occurs when the current of electrons passes over them.…”

Section: Introductionmentioning

confidence: 99%

“…Previous study has found that added chromium in the silicon of substrate materials, as opposed to silicon as a substrate material, have better characteristics, such as decreased resistance to contact electrodes and improved component driving currents. In accordance with its containing different amounts of Si electronic components can satisfy a wide range of required resistor values 1–3…”

Section: Introductionmentioning

confidence: 99%

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Effects of vacuum sintering temperature on mechanical properties and electric resistance for Cr50–Si50 optical target

et al. 2011

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In this study, two kinds of Cr and Si powders were mixed ingredients in set proportions (Cr/ Si550 : 50 in weight percentage), and different vacuum sintering temperatures were used to achieve the optimal densification process. The specimens used in this investigation have common microstructures of hardness, XRD, transverse rupture strength and resistivity of the Cr50-Si50 targets. The microstructure shows that the porosity tends to decrease as sintering temperature increases. Conversely, hardness and transverse rupture strength increase as sintering temperature increases. These results agree with the variation in porosity. Additionally, the resistivity tends to decrease with increasing sintering temperature. It should be correlated with the microstructure of Cr50-Si50 targets, increasing the density of CrSi 2 could significantly decrease the resistance. Meanwhile, the resistivity decreases and conductivity increases as the neighbours are closer together, which also results from the decreasing porosity.

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