Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature

Abstract

-The electroluminescence (EL) of multilayered p -i -n structures with the self-assembled Ge(Si)/Si(001) islands are investigated. It is found that the structures with islands grown at 600 ° C have the highest intensity of the electroluminescence signal at room temperature in the wavelength range of 1.3-1.55 µ m. The annealing of structures with the Ge(Si) islands leads to an increase in the EL-signal intensity at low temperatures and hampers the temperature stability of this signal, which is related to the additional Si diffusion into islands during annealing. The found considerable increase in the electroluminescence-signal intensity with the thickness of the separating Si layer is associated with a decrease in the elastic stresses in the structure with an increase in this layer's thickness. The highest EL quantum efficiency in the wavelength range of 1.3-1.55 µ m obtained in investigated structures amounted to 0.01% at room temperature.

Features of Radiation-Defect Annealing in n-Ge Single Crystals Irradiated with High-Energy Electrons

“…Those materials, being modified by dopants or radiation-induced defects, are raw materials for the creation of elements of a modern electronic equipment [5,6]. Furthermore, germanium and silicon are used in CMOS technologies for fabricating the electronic devices [7,8] and in nanostructures (Ge quantum dots and Si/Ge heterostructures) [9,10], which can also be subjected to the action of external radiation fields, for example, when the electronic equipment is exploited in spacecrafts [11].…”

Deformation potentials for Δ1 minimum of conduction band of single crystals n-Ge

“…The use of technologies for creation of uniaxial strain channels NMOSFET of electronic devices during replacing crystals n-Ge instead of n-Si allows to increase both the coefficient of amplification [4,5] and the tunnel current [6]. The use of nanostructures with the self-induced Ge/Si Nan islands starts the new prospects for the development of opto-and Nan electronics [7]. Arrays of Ge (GeSi) quantum dots can be used successfully for the production of photo detectors for near infrared range and light emitted diodes for the same spectral region [8].…”

Influence of different thermal treatment regimes on the hall parameters and the lifetime of charge carriers of transmutation doped silicon crystals

“…Застосування в мiкро-i наноелектронiцi шарiв полiкристалiчного кремнiю на поверхнi окисленої кремнiєвої пластини (КНI-структури) вiдкриває широкi можливостi для створення високочутливих приладiв мiкроелектронiки, а в поєднаннi з прийомами й методами нанотехнологiй дає змогу створити новий клас пристроїв з розширеними функцiйними можливостями, якi за своїми характеристиками набагато кращi вiд наявних аналогiв [11][12][13][14]. Застосування наноструктур iз самоiндукованими Ge(Si) наноострiвцями вiдкриває новi можливостi для розвитку опто-i наноелектронiки [15]. Одержання багатошарових масивiв квантових точок Ge в Si матрицi є перспективним з погляду їхнього використання в сонячних елементах [16,17].…”