Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers

Hallam, Brett; Tjahjono, Budi; Wenham, Stuart

doi:10.1016/j.solmat.2011.09.052

Cited by 62 publications

(40 citation statements)

References 12 publications

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“…We continue to assess the Si—H stretching mode at ≈2100 cm −1 from FTIR spectra captured from the sample (Figure B). The three spectra (as diffused, after FGA, and after AlO x :H + FGA) are identical and there is no signal from the Si—H bonds.…”

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Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

et al. 2019

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Herein, posttreatment techniques of phosphorus‐doped poly‐Si/SiOx passivating contacts, including forming gas annealing (FGA), atomic layer deposition (ALD) of hydrogenated aluminum oxide (AlOx:H), and plasma‐enhanced chemical vapor deposition (PECVD) of hydrogenated silicon nitride (SiNx:H), are investigated and compared in terms of their application to silicon solar cells. A simple FGA posttreatment produces a significant increase in the implied open circuit voltage (iVoc) and the effective minority‐carrier lifetime (τeff) of high‐resistivity crystalline Si (c‐Si) samples, whereas low‐resistivity samples show a minimal change. Treatment by means of AlOx:H and/or SiNx:H followed by postdeposition FGA results in a universal increase in τeff and iVoc for all substrate resistivities (as high as 12.5 ms and 728 mV for 100 Ω cm and 5.4 ms and 727 mV for 2 Ω cm n‐type c‐Si substrates). In addition, both the FGA and AlOx:H + FGA techniques can inject sufficient hydrogen into the samples to passivate defects at the SiOx/c‐Si and poly‐Si/SiOx interfaces. However, this hydrogen concentration is insufficient to neutralize both the nonradiative defects inside the poly‐Si films and dangling bonds associated with the amorphous Si phase present in them. The hydrogen injected by the SiNx:H + FGA technique can passivate both the interfaces and the defects and dangling bonds within the poly‐Si film. These results are confirmed by low‐temperature photoluminescence spectroscopy, Fourier transform infrared spectroscopy, and dynamic secondary‐ion mass spectrometry measurements.

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Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

et al. 2019

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“…Also double layer passivation systems consisting of two different silicon nitrides [6,7] or an amorphous silicon (a-Si) layer and a SiN layer [8,9] are applied. Recently, also silicon oxynitrides are investigated as passivation layer for solar cell application [10][11][12][13].…”

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Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

Schwab

Hofmann

Heller

et al. 2013

Phys. Status Solidi A

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This work investigates a double layer stack system that can be used for surface passivation of crystalline silicon. The stack consists of amorphous silicon-rich silicon oxynitride and amorphous silicon nitride on top. Both layers are fabricated by means of plasma-enhanced chemical vapour deposition. We investigate the stack in terms of changes in the hydrogen content and distribution within the different stack layers due to a high temperature treatment. For that purpose the stack is studied by Fourier-transformed infrared spectroscopy and nuclear reaction analysis before and after fast firing at 850°C. Our results determine the bottom silicon oxynitride layer as very hydrogen-rich. Furthermore, we identify the silicon nitride capping layer as diffusion barrier to atomic hydrogen but still allowing an effusion of molecular hydrogen. We present a qualitative model that explains our findings and distinguishes between atomic and molecular hydrogen

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“…Prior to the deposition of the dielectric passivation layer, wafers were given a saw-damage etch (SDE) with a resultant thickness of approximately 150 m μ , followed by an RCA clean and HF dip. Hydrogenated silicon oxynitride (SiO N : H x y ) layers with a refractive index of 2.3 and hydrogen content of approximately 14.2% [35] were deposited using a laboratory type Roth & Rau AK400 remote microwave PECVD system. Wafers were then annealed in nitrogen ambient at 400°C for 5 min (process P1).…”

Section: Lifetime Studies On N-type Cz Wafersmentioning

confidence: 99%

Hydrogen passivation of defect-rich n-type Czochralski silicon and oxygen precipitates

Hallam

Abbott

Wenham

2015

Solar Energy Materials and Solar Cells

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Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers

Cited by 62 publications

References 12 publications

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

Hydrogen passivation of defect-rich n-type Czochralski silicon and oxygen precipitates

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Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers

Cited by 62 publications

References 12 publications

Hydrogenation Mechanisms of Poly‐Si/SiOx Passivating Contacts by Different Capping Layers

Hydrogenation Mechanisms of Poly‐Si/SiOx Passivating Contacts by Different Capping Layers

Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

Hydrogen passivation of defect-rich n-type Czochralski silicon and oxygen precipitates

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Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers

Hydrogenation Mechanisms of Poly‐Si/SiO_x Passivating Contacts by Different Capping Layers