Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells

Lee, Seunga; Honda, Yoshio; Amano, Hiroshi

doi:10.1088/0022-3727/49/2/025103

Cited by 21 publications

(14 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6(a) for sample A, is not observed for sample B. Furthermore, for sample B, the absence of electron overflow within the higher temperature range, and higher current range, is mainly attributed to its larger well width and weaker piezoelectric field originating from the lower indium content 27–29 .…”

Section: Resultsmentioning

confidence: 89%

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Two InGaN/GaN multiple quantum well (MQW)-based blue light emitting diodes (LEDs) emitting photons at approximately the same wavelength, with different indium contents and well widths, are prepared, and the temperature-dependences of their electroluminescence (EL) spectra at different fixed injection currents are investigated. The results show that, compared with sample B with its lower indium content and larger well width, sample A with its higher indium content and smaller well width, has a stronger carrier localization effect and higher external quantum efficiency (EQE) at the lower fixed currents; however, upon increasing the injection current, both the localization effect and EQE for sample A decrease at a faster rate. The former is mainly attributed to the deeper potential levels due to the larger indium fluctuations originating from the higher indium content, and to the smaller well width-induced stronger carrier quantum-confine effect (QCE); the latter is mainly attributed to the more significant growing in the electron leakage and/or electron overflow originating from the smaller well width and larger lattice mismatch-induced stronger piezoelectric field, and to the more significant reduction in carrier localization effect originating from the smaller well width-induced smaller density of high-energy localized states.

show abstract

Section: Resultsmentioning

confidence: 89%

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

et al. 2017

Sci Rep

View full text Add to dashboard Cite

show abstract

“…In spite of these success stories, the material suffers with a low power conversion efficiency due to several issues [8], [9]. One of the key issues is stuck of immobile charge carriers along the heterojunction interface [10], [11]. In III-nitride material, spinodal decomposition occur at higher 'In' compositional level, leading to the formation of In-rich and Ga-rich regions in planar GaN/InGaN junction, which lead to stuck of immobile charge carriers at the interface of GaN/InGaN heterojunction, known as polarization charges (PCs) [11], [12].…”

Section: Introductionmentioning

confidence: 99%

Effect of Nanostructure on Carrier Transport Mechanism of III-Nitride and Kesterite Solar Cells: A Computational Analysis

Routray

Pradhan

Mishra

2020

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

In this work, the computational analysis on use of nanostructures to both III-Nitride and Kesterite solar cell are presented and compared. The scope behind the comparative analysis of III-nitride and kesterite material based solar cells is due to their excellent material properties, which made them suitable as an absorber for solar cells. In III-nitride based solar cells, stress induced polarization charges play an important role in carrier dynamics of cell, whereas, kesterite based cells suffer from detrimental effect due to its in-house defects. Here, an analysis is carried out to understand the above mentioned important effects i.e., carrier transport mechanisms under the influence of polarization charges in III-nitride materials and in presence of defects in kesterite materials with nanostructures. It is anticipated that, nanostructures provide lots of advantages over bulk layer in order to overcome the detrimental effects in solar cells. A detailed comparative analysis of both type of solar cells are carried out. Finally, quantum efficiency measurement is carried out in order to observe the range of light absorption in each structures. It is quite interesting to observe that nanostructure doesn't boost the performance of the solar cell unless until the device is engineered properly. It is purely depends on carrier recovery and transport from the nanostructures.

show abstract

“…Consequently, optimizing the thickness balance of the well/barrier layers in MQW structures is an important factor for achieving high‐energy conversion efficiency (ECE). Here, the strong piezoelectric field in nitride crystals must be taken into consideration because it may affect the carrier transfer property by changing the energy band structures . Recently, several researchers have reported the effect of InGaN‐based MQW structures on solar cell properties .…”

Section: Introductionmentioning

confidence: 99%

“…InGaN alloys have been attracting much attention as potential materials for solar cell devices, owing to their direct-transition and variable bandgaps, which can cover a large part of the solar spectrum. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Regarding the InGaN-based solar cells, many researchers have focused on multiple-quantum-well (MQW) structures that have a number of thin InGaN well layers inside. [6][7][8][9][10][11][12][13][14][15][16] This is because the MQW structures can pseudomorphically realize "thick InGaN layers" appropriate for the light absorption layers in solar cells with less difficulty during the material growth.…”

Section: Introductionmentioning

confidence: 99%

“…Here, the strong piezoelectric field in nitride crystals must be taken into consideration because it may affect the carrier transfer property by changing the energy band structures. [17] Recently, several researchers have reported the effect of InGaN-based MQW structures on solar cell properties. [9][10][11][12][13][14][15] We have also reported that the external quantum efficiency (EQE) of InGaN/GaN MQW solar cells was maximized at a specific well thickness.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition

Miyoshi

Ohta

Mori

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

Two kinds of substrates, sapphire and AlN/sapphire template (AlN template), are used for the growth of InGaN/GaN multi‐quantum‐well solar cell structures by metalorganic chemical vapor deposition, and their material and device properties are investigated. The results show that the samples grown on AlN template have a better crystal quality with a larger in‐plane compressive strain than those on sapphire, and solar cells fabricated on sapphire mostly exhibit better performance than those on AlN template. An analysis of the photoluminescence measurements indicates that a critical InGaN well thickness related to the generation of nonradiative recombination centers, which affects the internal and external quantum efficiencies, is thinner in samples grown on AlN template than in samples on sapphire. The critical thickness is speculated to be related to the large in‐plane compressive strain in the samples on AlN template. By contrast, in comparison between samples with a sufficiently thin InGaN well thickness of 1.0 nm, the sample on AlN template exhibits better solar cell performance than on sapphire. This implies that the improved crystal quality contributes to the improvement of internal quantum efficiency as long as the well layer is thinner than the critical thickness.

show abstract

Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells

Cited by 21 publications

References 18 publications

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

Effect of Nanostructure on Carrier Transport Mechanism of III-Nitride and Kesterite Solar Cells: A Computational Analysis

A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition

Contact Info

Product

Resources

About