Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator

Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Yurchenko, Stanislav O.; Mitin, Vladimir; Shur, M. S.

doi:10.1063/1.4766814

Cited by 55 publications

(28 citation statements)

References 39 publications

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“…For thin tunneling insulator the variation of ∆E is large and leads to a substantial broadening of the resonant peak of the tunneling current. 6,8 In addition, an insulator layer thickness of < 0.66 nm (∼ 2 atomic layers) is also important as ∼ 0.5 nm thick tunnel barrier is required to provide |C t /g t | ratios between 10 ps and 0.1 ps (which corresponds to a realistic range for experimentally achievable values of electron momentum relaxation time in graphene) which can be beneficial for ultra-high frequency and THz applications, [20][21][22] where, C t is the tunneling capacitance and g t is the peak negative differential conductance in the device. Moreover, coherence lengths (L) of 50 nm, 100 nm, 300 nm and 1200 nm were assumed in our device simulations.…”

Section: -D Device Modelmentioning

confidence: 99%

Effect of the intra-layer potential distributions and spatial currents on the performance of graphene SymFETs

Hasan

Sensale‐Rodriguez

2015

AIP Advances

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In this paper, a two-dimensional (2-D) model for a graphene symmetric field effect transistor (SymFET), which considers (a) the intra-graphene layer potential distributions and (b) the internal current flows through the device, is presented and discussed. The local voltages along the graphene electrodes as well as the current-voltage characteristics of the device are numerically calculated based on a single-particle tunneling model. Our numerical results show that: (i) when the tunneling current is small, due to either a large tunneling thickness (≥ 2 atomic layers of BN) or a small coherence length, the voltage distributions along the graphene electrodes have almost zero variations upon including these distributed effects, (ii) when the tunnel current is large, due to either a small tunneling thickness (∼ 1 atomic layer of BN) or due to a large coherence length, the local voltage distributions along the graphene electrodes become appreciable and the device behavior deviates from that predicted by a 1-D approximation. These effects, which are not captured in one-dimensional SymFET models, can provide a better understanding about the electron dynamics in the device and might indicate potential novel applications for this proposed device.

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Section: -D Device Modelmentioning

confidence: 99%

Effect of the intra-layer potential distributions and spatial currents on the performance of graphene SymFETs

Hasan

Sensale‐Rodriguez

2015

AIP Advances

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“…[3] or GLs separated by the barrier layers such as thin layers of Boron Nitride (hBN), Tungsten Disulfide (WS 2 ), or similar materials. Such heterostructures have recently attracted a considerable interest and enabled several novel devices being proposed and realized [19][20][21][22][23][24][25][26][27][28][29][30][31]. The GL-photodetectors, especially those based on the multiple-GL structures, can combine a high responsivity with a relatively low dark current at ele- * Electronic mail: v-ryzhii(at)riec.tohoku.ac.jp vated temperatures (up to room temperatures).…”

Section: Introductionmentioning

confidence: 99%

Graphene vertical hot-electron terahertz detectors

Ryzhii

Satou

Otsuji

et al. 2014

Journal of Applied Physics

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We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the electrons heated by incoming THz radiation. Hence, Hence, these detectors are the hot-electron bolometric detectors. The electron heating is primarily associated with the intraband absorption (the Drude absorption). In the frame of the developed model, we calculate the responsivity and detectivity as functions of the photon energy, GL doping, and the applied voltage for the GL detectors (GLDs) with different number of GLs. The detectors based on the cascade multiple-GL structures can exhibit a substantial photoelectric gain resulting in the elevated responsivity and detectivity. The advantages of the THz detectors under consideration are associated with their high sensitivity to the normal incident radiation and efficient operation at room temperature at the low end of the THz frequency range. Such GLDs with a metal grating, supporting the excitation of plasma oscillations in the GL-structures by the incident THz radiation, can exhibit a strong resonant response at the frequencies of several THz (in the range, where the operation of the conventional detectors based on A3B5 materials, in particular THz quantum-well detectors, is hindered due to a strong optical phonon radiation absorption in such materials). We also evaluate also the characteristics of GLDs in the mid-and far-infrared ranges where the electron heating is due to the interband absorption in GLs.

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“…In the first place, it is high electron mobility [9] that allows ultrafast (up to THz) operation of graphene-based devices, including field-effect transistors (FETs) [10], optical modulators [11,12], and detectors of radiation [13]. High mobility also facilitates the resonant plasma wave excitation in those structures.…”

Section: Introductionmentioning

confidence: 99%

Graphene nanoelectromechanical resonators for the detection of modulated terahertz radiation

Svintsov¹,

Leiman²,

Ryzhii³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract. We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging of top GL, resulting in the drain current oscillations. To estimate the device responsivity, we solve the hydrodynamic equations for the electrons and holes in graphene governing the plasma-wave response, and the equation describing the graphene membrane oscillations. The combined plasma-mechanical resonance raises the current amplitude by up to four orders of magnitude. The use of graphene as a material for the elastic gate and conductive channel allows the voltage tuning of both resonant frequencies in a wide range.

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Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator

Cited by 55 publications

References 39 publications

Effect of the intra-layer potential distributions and spatial currents on the performance of graphene SymFETs

Effect of the intra-layer potential distributions and spatial currents on the performance of graphene SymFETs

Graphene vertical hot-electron terahertz detectors

Graphene nanoelectromechanical resonators for the detection of modulated terahertz radiation

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