Effect of plasma treatment on interface property of BCN/GaN structure

Shimada, Yoshimi; Chikamatsu, Kentaro; Kimura, Chiharu; Aoki, Hidemitsu; Sugino, Takashi

doi:10.1016/j.apsusc.2006.02.016

Cited by 7 publications

(5 citation statements)

References 18 publications

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“…The experimental characterization has been done using infrared spectroscopy yielding an energy gap in the regime of 5.3 a 5.9 eV with the results depending on the sample oxidation. To understand the electronic properties of materials obtained from boron nitride [10,11], in this work we address the problem of the interaction of oxygen with boron nitride sheet. In addition we shall analyze the possible carbon migration into the boron nitride oxide lattice.…”

Section: Introductionmentioning

confidence: 99%

On the Electronic Properties of the Boron Nitride Oxide by Density Functional Theory

Anota¹,

Hernández²,

Rivas³

et al. 2013

j comput theor nanosci

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We analyze the electronic properties of boron nitride oxide (BNO) sheets using the density functional theory within the local density approximation, in a similar form as reported by Sota et al., [Diamond Relat. Mater. 17, 826 (2008)]. The BNO sheets with the chemical composition of B 27 N 27 H 18 +O, are represented by the circular armchair model. Six different configurations are considered to investigate the interaction of oxygen atoms with the sheets. These models depend upon the position of the O atom. In C1 the atom bonds to 2 N atoms, in C2 the atom bonds to 2 B atoms, in C3 the atom is on top of a B atom, in C4 the atom is on top of a N atom, in C5 the O bonds to a B-N dimer of a hexagon, and in C6 the O bonds to a B and to a N within the plane of the hexagon. Results of the total energy and the vibration frequency of each configuration yield C5 as the most stable structure with the formation of an epoxy group. This low energy atomic geometry displays high polarity with semiconductor behavior. By analyzing the possible carbon migration into the BNO sheet we conclude that the O is only physisorbed on the surface to form CO.

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Section: Introductionmentioning

confidence: 99%

On the Electronic Properties of the Boron Nitride Oxide by Density Functional Theory

Anota¹,

Hernández²,

Rivas³

et al. 2013

j comput theor nanosci

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“…Besides this fundamental interest of the BNC molecule in chemical bonding and electronic structure, ternary boron -nitrogen -carbon containing compounds have gained significant attention due to their unusual physical and chemical characteristics. First, BNC nanostructures have been shown to have higher than predicted chemical and thermal stabilities than their analogous carbon nanostructures. − This brings important technological applications of BNC material as oxygen-resistant coatings for carbon fiber materials , as high temperature transistors, electrical conductors, and lubricants . Furthermore, BNC nanotubes have the asset of being electrically luminescent with applications for flat panel displays .…”

Section: Introductionmentioning

confidence: 99%

“…First, BNC nanostructures have been shown to have higher than predicted chemical and thermal stabilities than their analogous carbon nanostructures. [29][30][31][32][33][34][35][36] This brings important technological applications of BNC material as oxygen-resistant coatings for carbon fiber materials 37,38 as high temperature transistors, electrical conductors, and lubricants. 39 Furthermore, BNC nanotubes have the asset of being electrically luminescent with applications for flat panel displays.…”

Section: Introductionmentioning

confidence: 99%

Crossed Molecular Beam Study on the Ground State Reaction of Atomic Boron [B(²P_j)] with Hydrogen Cyanide [HCN(X¹Σ⁺)]

Jones

Matsyutenko

et al. 2010

J. Phys. Chem. A

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The linear boronisocyanide species, [BNC(X(1)Sigma(+))], represents the simplest triatomic molecule with three distinct, neighboring main group atoms of the second row of the periodic table of the elements: boron, carbon, and nitrogen. This makes boronisocyanide a crucial benchmark system to understand the chemical bonding and the electronic structure of small molecules, in particular when compared to the isoelectronic tricarbon molecule, [CCC(X(1)Sigma(g)(+))]. However, a clean, directed synthesis of boronisocyanide-a crucial prerequisite to study the properties of this molecule-has remained elusive so far. Here, we combine crossed molecular beam experiments of ground state boron atoms ((2)P(j)) with hydrogen cyanide with electronic structure calculations and reveal that the boronisocyanide molecule, [BNC(X(1)Sigma(+))], is formed as the exclusive product under gas phase single collision conditions. We also show that higher energy isomers such as the hitherto unnoticed, ring-strained cyclic BNC(X(3)A') structure, which is isoelectronic to the triplet, cyclic tricarbon molecule, [C(3)(X(3)A(2)')], do exist as local minima. Our studies present the first directed synthesis and observation of gas phase boronisocyanide providing a doorway for further fundamental studies on one of the simplest triatomic molecules composed solely of group III-V elements.

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“…Most reports on MISFETs on GaN have been based on deposited gate insulator film technologies such as those using SiO 2 , Si 3 N 4 , AlSiO, and Ga 2 O 3 . [1][2][3][4] Kim et al reported the structural and electrical characteristics of Ga oxide by the thermal oxidation of a GaN. 5) Their results suggest that thermally grown Ga 2 O 3 is promising for GaN-based power MOSFET applications.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure

Futatsuki

Aoki

et al. 2009

jjap

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A gallium oxide layer was successfully formed on a GaN surface by saturated water vapor oxidation at a high pressure (350 C, 16.5 MPa). Ga oxide thickness can be controlled in the 5 -1,000 nm range by such oxidation process for 15 min. Saturated water vapor oxidation is a rapid and very low temperature oxidation process compared with the conventional thermal oxidation of GaN. This rapid oxidation potential at a low temperature is attributed to the high density of the oxidizer (H 2 O) under high-pressure condition. By applying post-treatment with high-pressure hot water, residual nitrogen in the oxide layer is removed and the stoichiometric composition of Ga 2 O 3 is observed by X-ray photoelectron spectroscopy (XPS). The removal of nitrogen from the oxide by the high-pressure hot water is caused by its high solubility of inorganic compounds. Rapid and low-temperature oxidation can be applicable to the fabrication of a high-performance device without thermal stress for GaN-field effect transistors (FETs). #

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Effect of plasma treatment on interface property of BCN/GaN structure

Cited by 7 publications

References 18 publications

On the Electronic Properties of the Boron Nitride Oxide by Density Functional Theory

On the Electronic Properties of the Boron Nitride Oxide by Density Functional Theory

Crossed Molecular Beam Study on the Ground State Reaction of Atomic Boron [B(²P_j)] with Hydrogen Cyanide [HCN(X¹Σ⁺)]

Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure

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Effect of plasma treatment on interface property of BCN/GaN structure

Cited by 7 publications

References 18 publications

On the Electronic Properties of the Boron Nitride Oxide by Density Functional Theory

On the Electronic Properties of the Boron Nitride Oxide by Density Functional Theory

Crossed Molecular Beam Study on the Ground State Reaction of Atomic Boron [B(2Pj)] with Hydrogen Cyanide [HCN(X1Σ+)]

Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure

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Crossed Molecular Beam Study on the Ground State Reaction of Atomic Boron [B(²P_j)] with Hydrogen Cyanide [HCN(X¹Σ⁺)]