Effect of platinum doping on the structural and electrical properties of SnO₂thin films

Abstract

The investigation of Pt doping effect on the structural and electrical properties of SnO 2 thin films was aimed in this study. For this purpose, the polycrystalline pure and Pt-doped SnO 2 thin films were deposited onto n-type silicon substrate and the Pt sputter power was varied as 0 (un-doped), 2, 5 and 7 W by using radio frequency confocal sputtering system. The structural properties of the samples were analysed by X-ray diffraction measurements. The structural results show that the 5 W Pt-doped SnO 2 sample has better crystallinity than the other samples. The results of the electrical measurements as currentÀvoltage, capacitanceÀvoltage and conductanceÀvoltage were also obtained and discussed in detail for fabricated diodes. The analysis of electrical characteristics shows that the use of different Pt doping has significant effect on electrical properties of such devices. The study also provides an improved supplemental understanding to the related technologies which use Pt-doped SnO 2 materials.

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

“…GaAs thin film deposition was described elsewhere [7], and comprises basically the resistive evaporation technique, in a BOC Edwards evaporator system model AUTO 500. The evaporation of GaAs occurs due to the low pressure inside the chamber, allowing a beam of the material in the gaseous phase to be directed to the substrate, attached to a rotating plate, which assures homogeneous composition and thickness of deposited films.…”

“…Recently Nd-doped SnO 2 thin films deposited by the RF magnetron sputtering at different temperatures [6] have also shown improvement of the n-type character, carrier concentration, resistivity and mobility with deposition temperatures up to 300 °C. Structural and electrical characteristics of the SnO 2 samples were also significantly affected by Pt-doping [7]. The temperature dependence of the electrical conductivity of undoped, and Cu, Al and In-doped SnO 2 deposited on glass substrate by spray pyrolysis [8] has shown an almost constant behavior in the range 120-300 K, and changes gradually in the temperature range of 300-400 K. The electrical conductivity of SnO 2 film decreased with doping with Al 3+ , In 3+ and Cu 2+ in the whole investigated temperature range, that can be explained by the coexistence of donors (intrinsic point defects such as oxygen vacancies and tin interstitials, as already mentioned), and acceptors (substitution of Sn 4+ by In 3+ , Cu 2+ or Al 3+ ) which compensate each other.…”

Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes

“…To determine the electrical output parameters of a-IGZO based diodes, the standard thermionic emission (TE) theory was used [45,46].…”

In2O3 İnce Filmlerin Yapısal, Morfolojik, Optik ve Elektriksel Özelliklerinin İncelenmesi: Gaz Sensörü Uygulamaları

“…Metal oksitler; eşsiz fiziksel ve kimyasal özelliklerinden dolayı, son zamanlarda sıkça çalışılmaktadır [1][2][3]. Metal oksit malzemeler içerisinden; geniş bant aralığı (3.5 eV -3.7 eV), yüksek elektriksel iletkenlik ve yüksek optik geçirgenlik gibi önemli fonksiyonel özelliklere sahip olan indiyum oksit (In2O3) ince filmler dikkat çekmektedir [4][5][6].…”