Effect of polarization on two-dimensional carrier distribution in nitride quantum wells

We have studied the electron and hole focusing problem observed in gallium nitride (GaN) based microcavity lasers. We outlined the relation between the focusing efficiency and the unbalance between electron and hole mobilities. A new device structure is proposed where the n-layer is on the top of the p-layer, which overcomes the focusing limitation of conventional GaN based vertical cavity surface emitting lasers and polariton lasers

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Effect of polarization on two-dimensional carrier distribution in nitride quantum wells

Cited by 2 publications

References 17 publications

The influence of mobility unbalance on GaN based vertical cavity surface emitting lasers

The influence of mobility unbalance on GaN based vertical cavity surface emitting lasers

Enhancement of carrier focusing GaN based vertical cavity surface emitting lasers and polariton lasers

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