Understanding the
changes that occur in the micro-mechanical
properties
of semiconductor materials is of utmost importance for the design
of new flexible electronic devices, especially to control the properties
of newly designed materials. In this work, we present the design,
fabrication, and application of a novel tensile-testing device coupled
to FTIR measurements that enables in situ atomic investigations of
samples under uniaxial tensile load. The device allows for mechanical
studies of rectangular samples with dimensions of 30 mm × 10
mm × 0.5 mm. By recording the alternation in dipole moments,
the investigation of fracture mechanisms becomes feasible. Our results
show that thermally treated SiO2 on silicon wafers has
a higher strain resistance and breaking force than the SiO2 native oxide. The FTIR spectra of the samples during the unloading
step indicate that for the native oxide sample, the fracture happened
following the propagation of cracks from the surface into the silicon
wafer. On the contrary, for the thermally treated samples, the crack
growth starts from the deepest region of the oxide and propagates
along the interface due to the change in the interface properties
and redistribution of the applied stress. Finally, density functional
theory calculations of model surfaces were conducted in order to unravel
the differences in optic and electronic properties of the interfaces
with and without applied stress.