(GIST), Gwangju 61005, Korea † These authors have contributed equally to this work.Keywords: dielectric constant, low-k, nanolattice, porosity, Young's modulus.
AbstractLow dielectric constant (low-k) materials have gained increasing popularity because of their critical role in developing faster, smaller, and higher performance devices. Their practical 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 use has been limited by the strong coupling between mechanical, thermal, and electrical properties of materials and their dielectric constant; low-k is usually attained by materials that are very porous, which results in high compliance, i.e. silica aerogels, 39 high dielectric loss, i.e.porous polycrystalline alumina, 25 and poor thermal stability, i.e. Sr-based metal-organic frameworks. 23 We report the fabrication of 3D nano-architected hollow-beam alumina dielectrics whose k is 1.06-1.10 at 1MHz that is stable over the voltage range of -20V to 20V and a frequency range of 100 kHz to 10 MHz. This dielectric material can be used in capacitors and is mechanically resilient, with a Young's modulus of 30 MPa, a yield strength of 1.07 MPa, a nearly full shape recoverability to its original size after >50% compressions, and outstanding thermal stability with a thermal coefficient of dielectric constant (TCK) of 2.43 × 10 -5 K -1 up to 800 °C. These results suggest that nano-architected materials may serve as viable candidates for ultra low-k materials that are simultaneously mechanically-resilient, and thermally and electrically stable for microelectronics and devices.
Main TextDesigning and synthesizing low dielectric constant (low-k) materials has been a subject of intense research because of their potential use in high performance technological applications like computer processing, 1,2 wireless communications, [3][4][5][6] and automotive radar. 7 Lowering the k of the interlayer dielectric decreases the resistance-capacitance (RC) delay, lowers power consumption, and reduces cross-talk between nearby interconnects, all of which pose significant issues for modern integrated circuits (ICs). [8][9][10] The low-k property is also favored in low temperature co-fired ceramic (LTCC) technology and represents the backbone of Multi Chip Module (MCM) technology, which enables the integration of passive elements like inductors, 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 3 resistors, and capacitors, which serve as building blocks for 3D circuits for the microwave/millimeter communications industry. [11][12] For example, the antenna in a typical RF module for radiating/receiving radio waves, requires the supporting substrate whose k is sufficiently low to preven...