2006 International Interconnect Technology Conference 2006
DOI: 10.1109/iitc.2006.1648670
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Effect of Porosity on Charge Transport in Porous Ultra-Low-k Dielectrics

Abstract: It is demonstrated that the free volumes or pores in porous ultra-low-k dielectrics disturb the local electric field around them. This disturbed local electric field is shown to facilitate the transport of charge particles such as copper ions, electrons, or holes. This leads to the conclusion that porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism.

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