Effect of Porosity on Electrical Stability of Hydrocarbon Polymeric Low-&lt;tex&gt;$k$&lt;/tex&gt;Dielectric

Yiang, K. Y.; Yoo, Won Jong; Krishnamoorthy, Ahila

doi:10.1109/ted.2005.856189

Cited by 11 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is evidence that trap states contribute to leakage current and thereby degrade both the performance and reliability of the insulating films. 8 In the early work of Williams, 5 the density of traps within SiO 2 films was examined by measurement of the current flow that could be induced after termination of photoexcitation with UV radiation by application of visible light. We have applied a related measurement technique in which we observe the spontaneous current flow after abruptly interrupting photoexcitation to determine the net amount of thermally detrapped charge.…”

Section: Introductionmentioning

confidence: 99%

Photocurrent spectroscopy of low-k dielectric materials: Barrier heights and trap densities

Atkin

Song

Shaw³

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

Measurements of photoinduced current have been performed on thin films of porous low-k dielectric materials comprised of carbon-doped oxides. The dielectric films were deposited on silicon surfaces and prepared with a thin gold counterelectrode. From the spectral dependence of the photoinduced current, barrier heights for the dielectric/silicon and dielectric/gold interface were deduced. Transient currents were also found to flow after the photoexcitation was abruptly stopped. An estimate of the density of shallow electron traps within the low-k material was obtained from the measurement of the net charge transported from this detrapping current. A density of traps in the range of 6 ϫ 10 16 traps/ cm 3 was inferred for the low-k films, far exceeding that observed by the same technique for reference dielectric films of pure SiO 2. This behavior was also compatible with photocurrent I-V measurements on the low-k dielectric films and SiO 2 reference sample.

show abstract

Section: Introductionmentioning

confidence: 99%

Photocurrent spectroscopy of low-k dielectric materials: Barrier heights and trap densities

Atkin

Song

Shaw³

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Electron trap states within low-k dielectric ͑LKD͒ films play a significant role in electrical leakage and timedependent dielectric breakdown in these materials. 1 An important conduction mechanism within these LKD films involves charge hopping from trap states, as described, for example, by the Poole-Frenkel model. 2,3 Thus, the properties of the trap states are closely related to the overall reliability of LKDs, a central problem for many industrial applications of these insulating films.…”

mentioning

confidence: 99%

Charge trapping at the low-k dielectric-silicon interface probed by the conductance and capacitance techniques

et al. 2008

View full text Add to dashboard Cite

Trap states close to the interfaces in thin films of porous low-k dielectric materials are expected to affect interfacial barriers with contacts and consequently electrical leakage and reliability in these materials. These interfacial traps were investigated using capacitance and conductance measurements in metal/insulator/silicon capacitor structures composed of carbon-doped oxide low-k dielectric films with gold counterelectrodes. The measurements yielded information on the charge state of the low-k dielectric and an estimated density of traps near the Si interface of 2 ϫ 10 11 cm −2 eV −1 , considerably greater than in typical SiO 2 films. The effects of temperature and annealing were also investigated. An activation energy of 0.36Ϯ 0.04 eV for trap filling and emptying was inferred.

show abstract

“…Results have demonstrated the surface electric field distribution is relatively homogeneous for the dense film, which is made it easy to be completely polarized. The roughness also affects its own mechanical and electrical output performance [24], which is attributed to the surface defects [26].…”

Section: Resultsmentioning

confidence: 99%

Optimizing solvent dipole moment enables PVDF to improve piezoelectric performance

Wang,

Dang

et al. 2023

Nanotechnology

View full text Add to dashboard Cite

The all-trans conformation (β-phase) possesses a significant impact on the piezoelectric polymer polyvinylidene fluoride (PVDF). Inducing more molecular chain [-CH2-CF2-]n to form all-trans conformation is one of the biggest obstacles for manufacturing high-performance piezoelectric sensing devices. Herein, the continuous vacuum technology is used to modulate the polarity of binary solvents by the proportion of the lower solvent. The regulated solvent forms a high dipole moment, an interaction between the dipole of β-phase and the dipole moment makes the phase reversal in PVDF. Fourier transform infrared spectroscopy, piezoelectric constant test and other characterization results show that when the weakly polar acetone and the strongly polar solvent DMF reach a ratio of 4:6, the pure PVDF film possesses high piezoelectricity (d33∼ -44.8 pC/N) and strong self-polarization. Additionally, the A4D6 device exhibits high sensitivity (S1 = 0.182 V/N, 0.5 N ~30 N), driven capability (0.49 mW/m2), and reliability during the electrical tests as a pressure device. This work provides an effective and cost-effective route of optimizing the solvent’s polarity to improve the piezoelectric characteristics of the polymer.

show abstract

Effect of Porosity on Electrical Stability of Hydrocarbon Polymeric Low-<tex>$k$</tex>Dielectric

Cited by 11 publications

References 9 publications

Photocurrent spectroscopy of low-k dielectric materials: Barrier heights and trap densities

Photocurrent spectroscopy of low-k dielectric materials: Barrier heights and trap densities

Charge trapping at the low-k dielectric-silicon interface probed by the conductance and capacitance techniques

Optimizing solvent dipole moment enables PVDF to improve piezoelectric performance

Contact Info

Product

Resources

About