2017
DOI: 10.17485/ijst/2017/v10i42/115790
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Effect of Post Annealing on the Structural Properties of Vanadium Oxide Thin Film Deposited by RF Sputtering

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Cited by 3 publications
(2 citation statements)
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“…One of the main challenges of these sensors is long-term stability. Since the melting point of V2O5 is 680 °C [22] (650 °C in some studies [23]), there is a high possibility that an operating temperature of 600°C for a long period could cause damage of Au-V2O5 sensing electrode.…”
Section: Methodsmentioning
confidence: 99%
“…One of the main challenges of these sensors is long-term stability. Since the melting point of V2O5 is 680 °C [22] (650 °C in some studies [23]), there is a high possibility that an operating temperature of 600°C for a long period could cause damage of Au-V2O5 sensing electrode.…”
Section: Methodsmentioning
confidence: 99%
“…It was observed that doping with high valent cations decrease and low valent cation increase the switching temperature of electrical and optical properties of vanadium oxide thin films. Gupta and Kumar [13] deposited the thin films of vanadium oxide by RF sputtering and studied the effect of post annealing. It was found that a highly crystalline and layered structure vanadium pentoxide thin film obtained by post annealing at 500°C in Ar atmosphere.…”
Section: Introductionmentioning
confidence: 99%