Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering

Yen, W. T.; Lin, Yi‐Cheng; Yao, Pin-Chuan; Ke, Jia; Chen, Y.L.

doi:10.1016/j.tsf.2009.10.149

Cited by 62 publications

(22 citation statements)

References 21 publications

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“…The dominant peak at 530.11 eV is attributed to the O 2− ion in the wurtzite structure surrounded by the Zn ions. The peak at 531.23 eV is assigned to loosely bound oxygen, such as absorbed O 2 and/or adsorbed H 2 O on the sample surface [39]. Note that the core line of Zn 2p 3/2 shows a symmetry feature with a FWHM of about 1.95 eV and the binding energy of Zn 2p 3/2 remains to be about 1021.73 eV, which confirms that the majority of Zn atoms remain in the same formal valence state of Zn 2+ within the ZnO matrix [20,40].…”

Section: Xps Analysismentioning

confidence: 99%

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

You

Hua

2012

Journal of Alloys and Compounds

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Section: Xps Analysismentioning

confidence: 99%

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

You

Hua

2012

Journal of Alloys and Compounds

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“…Therefore, the research in this field (the influence of the growth parameters, and subsequent heat treatment on the properties and the stability of the films) is intensively conducted [19][20][21][22]. Al/ZnO is easy to fabricate with various deposition methods, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Al/ZnO is easy to fabricate with various deposition methods, e.g. thermal evaporation [17], chemical vapour deposition (CVD) [18], plasma-enhanced chemical vapour deposition (PECVD) [19], sol-gel [20], spray pyrolysis [21], and magnetron sputtering [22,23]. Among sputtering methods, continuous direct current (dc) magnetron sputtering is the simplest and has many advantages such as a higher deposition rate and an easier operation than radio frequency magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature on structural, morphological and optical properties of deposited Al/ZnO films

et al. 2014

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Al-doped ZnO (Al/ZnO) thin film is a promising alternative to an ITO electrode in solar cell applications due to its low price, non-toxicity and other promising properties. In this paper, Al/ZnO thin films at different substrate temperatures were deposited on glass substrates as transparent conducting (TCO) films by DC magnetron sputtering. The effect of substrate temperature on the structural, morphological and optical properties of Al/ZnO films was investigated. X-ray diffraction (XRD) analysis suggests that crystal structure characteristics of synthesized thin films depend on the substrate temperature. The structure growth and variation in surface roughness with increasing substrate temperature are revealed by scanning electron microscope (SEM) micrographs and atomic force microscopy (AFM) analyses. Thicknesses of the deposited films were also examined by surface profiler. Moreover, obtained results from optical transmission patterns revealed that with the increasing substrate temperature, optical transmittance decreases.

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“…5. The value of E g can be obtained by extrapolating the straight linear portion of the plots between (ahm) 2 and hm to the phonon energy axis [22]. The optical band gaps of the thin films are shown in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Effect of reaction temperature on surface morphology and photoelectric properties of ZnO grown by hydrothermal method in mixed solvent

Sun

Cao

et al. 2015

J Mater Sci: Mater Electron

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ZnO thin films were prepared by hydrothermal method in mixed solvent with different reaction temperatures. Microstructure, surface morphology, optical properties and UV photoresponse of the thin films have been investigated by means of X-ray diffractometer, scanning electron microscopy, laser micro-Raman spectrometer, UV-Vis spectrophotometer and interactive source meter instrument. The results indicated that ZnO thin films consist of ZnO nanoparticles with hexagonal wurzite structure. A small quantity of Zn(OH) 2 appear as reaction temperature increase to 125°C. ZnO thin film grown at 175°C consists of many densely vertically aligned ZnO nano rods on the substrate and has the best preferential c-axis orientation. Three peaks centered at about 446, 568 and 1150 cm -1 have been attributed to E 2 (high), A 1 (LO) and 2A 1 (LO) phonon mode. Broadening of the visible emission band may be attributed to abundant surface defects and surface states of the thin films. Variation of the E g may be attributed to the synergy of surface morphology and oxygen-vacancy (V O ) density. The fast and slow UV photo response may be attributed to the adsorption and photo desorption of oxygen molecules on the surface of ZnO thin films and exchange process between oxygen gas and native deep defect level, respectively.

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Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering

Cited by 62 publications

References 21 publications

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

Effect of substrate temperature on structural, morphological and optical properties of deposited Al/ZnO films

Effect of reaction temperature on surface morphology and photoelectric properties of ZnO grown by hydrothermal method in mixed solvent

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