2011
DOI: 10.1016/j.tsf.2011.01.130
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Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition

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Cited by 7 publications
(2 citation statements)
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“…The volatility of K 2 O and Na 2 O in KNN thin films strongly affects their structural optical and electrical properties, such as secondary phases, crystal defects, large leakage current density, low impedance, high dielectric loss and unsaturated polarization, etc. [14,15]. Hence, to make practical use of lead-free KNN thin films, it is essential to first investigate its structural and optical properties.…”
Section: Introductionmentioning
confidence: 99%
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“…The volatility of K 2 O and Na 2 O in KNN thin films strongly affects their structural optical and electrical properties, such as secondary phases, crystal defects, large leakage current density, low impedance, high dielectric loss and unsaturated polarization, etc. [14,15]. Hence, to make practical use of lead-free KNN thin films, it is essential to first investigate its structural and optical properties.…”
Section: Introductionmentioning
confidence: 99%
“…Raman spectra of KNN thin films annealed at 700 and 750 • C.of sol-gel route, post-annealing temperature is a significant factor because crystallinity and surface morphology of thin films are basically affected by the volatilization of organic compounds during post-annealing heat treatment[15]. The peaks around 40 and 46 • are corresponding to the Pt (111) and Pt (200) planes, respectively (JCPDS 04-802).…”
mentioning
confidence: 99%