Effect of Post Deposition Annealing on ALD-ZrO<sub>2</sub>/SiON Gate Stacks for Advanced CMOS Technology

Gupta, Rajive; Vaid, Rakesh

doi:10.1149/07517.0067ecst

Cited by 6 publications

(3 citation statements)

References 18 publications

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“…The WDS measurement as shown in Table confirms the zirconium oxide thin films at the edge of the fiber (inset of Figure 1b). The size of the zirconia thin film was also crosschecked with the Ellipsometry measurements as an indirect probe generally conducted for the determination of the thickness of materials from their optical properties [10,11]. Figure 2 gives the experimental data and the fits using the Cauchy model.…”

Section: Characterizations and The Performance Testsmentioning

confidence: 99%

Atomic layer deposition of zirconium oxide thin film on an optical fiber for cladding light strippers

Karatutlu¹

2020

Turk J Phys

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Cladding light strippers are essential components in high-power fiber lasers used for removal of unwanted cladding light that can distort the beam quality or even damage the whole fiber laser system. In this study, an Atomic Layer Deposition system was used for the first time to prepare the cladding light stripper devices using a 40 nm thick zirconia layer grown on optical fiber. The thickness of the zirconia coating was confirmed using the Scanning Electron Microscopy (SEM) and the Ellipsometry techniques. The elemental analysis was also performed using the wavelength dispersive X-ray spectroscopy technique. The Raman spectroscopy and XRD data confirm the structure of the atomic layer deposition-grown zirconia thin films to be predominantly amorphous. The cladding light stripper devices formed using the zirconia thin films with the lengths of 8.5 and 15.5 cm were able to strip approximately 30% (~1.5 dB) and 40% (~2.3 dB) of the unwanted cladding light.

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Section: Characterizations and The Performance Testsmentioning

confidence: 99%

Atomic layer deposition of zirconium oxide thin film on an optical fiber for cladding light strippers

Karatutlu¹

2020

Turk J Phys

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“…However, its physical limitations and unacceptable leakage current levels calls for the requirement of materials having higher value of dielectric constant. Several high-k dielectrics such as Al2O3, HfO2, ZrO2, TiO2, and Ta2O5 have been extensively studied for the replacement of SiO2 [1][2][3][4][5][6][7]. Among them, ZrO2 is one of the most attractive candidates owing to its outstanding physical, chemical and electrical properties such as high melting point, good thermodynamic stability with silicon, high dielectric constant (k∼25), high refractive index, and higher band gap (~5.8 eV) [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Gupta¹,

Vaid²

2018

ECS Trans.

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Keeping in view the potential demands of 22 nm (and beyond) technology nodes for high-k dielectric materials, the device reliability was taken into consideration by selecting appropriate atomic scale deposition techniques and device characterization methods. This paper presents the fabrication of n-Si/ALD-ZrO2 gate stack with an ultra-thin silicon oxynitride (SiON) as an interfacial layer (IL). The problem of the gate leakage current has been resolved by post deposition annealing (PDA) of ZrO2 film ~ 11.63 nm in oxygen ambient on the silicon substrate followed by the pre-growth of SiON IL ~ 6.92 nm. The structural, morphological and film thickness studies have been performed by the characterization techniques such as XRD, AFM and FESEM respectively. Electrical characterizations such as capacitance-voltage (C-V) and current density-voltage (J-V) reveal the improved results for O2 annealed ZrO2 sample relative to the as-deposited ZrO2 sample in terms of suppressed gate leakage current (~2.8×10 -8 A/cm 2 ), increased dielectric constant (~ 33) and reduced effective oxide thickness (EOT~ 1.37 nm). O2 annealed ZrO2/SiON gate stack exhibits excellent results in terms of reduced EOT, reduced leakage current and increased dielectric constant relative to as-deposited ZrO2/SiON gate stack.

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“…To overcome these issues, high-k dielectric materials are in demand which not only inhibit direct tunneling but also ensures relatively thicker oxides [1]. Infact, high-k materials are fascinating the modern industry due to their potential use as gate dielectrics in metal-oxide semiconductor field-effect transistor (MOSFETs) [2][3][4]. To replace SiO2 as gate oxide, a number of high-k dielectrics have been extensively studied such as aluminum oxide Al2O3 [5], zirconium dioxide ZrO2 [6], cerium oxide CeO2 [7], gadolinium oxide Gd2O3 [8], neodymium oxide Nd2O3 [9] and titanium dioxide TiO2 [10].…”

Section: Introductionmentioning

confidence: 99%

Argon Annealed ALD-ZrO ₂ /SiON Gate Stack for Advanced CMOS Devices

2017

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We report on the fabrication of silicon oxynitride (SiON ~ 5.34 nm) as a sacrificial layer for an n-Si/ALD-ZrO2 gate stack followed by the postdeposition annealing (PDA) of ZrO2 in argon ambient. The surface morphological studies include atomic force microscopy and field emission scanning electron microscopy whereas the thicknesses of the grown films were confirmed by both ellipsometry and FESEM cross-sectional studies. The surface topographical study suggests an r.m.s. roughness of 0.796 nm for nano zirconia film after rapid thermal annealing (RTA). Electrical parameters such as dielectric constant k, effective oxide thickness EOT, leakage current density J, effective oxide charge Qeff and series resistance Rs were extracted through C-V and I-V measurements and the determined values of k, J, EOT, Qeff and Rs at 100 kHz are 26, 8.75 × 10 -9 A/cm 2 , 2.5 nm, 0.42 × 10 13 cm -2 and 4.54 kΩ, respectively. The concept of an SiON SL has significantly suppressed the existing unacceptable gate leakage current and interfacial traps owing to appropriate segregation of nitrogen at the interface of SiON/ZrO2. Moreover, PDA of ZrO2 film in Ar-ambient at 500 o C has reduced the r.m.s roughness and also contributed to the overall reduction of gate leakage current density, thereby, making the ALD-ZrO2/SiON gate stack quite attractive for advanced CMOS devices.

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Effect of Post Deposition Annealing on ALD-ZrO₂/SiON Gate Stacks for Advanced CMOS Technology

Cited by 6 publications

References 18 publications

Atomic layer deposition of zirconium oxide thin film on an optical fiber for cladding light strippers

Atomic layer deposition of zirconium oxide thin film on an optical fiber for cladding light strippers

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Argon Annealed ALD-ZrO ₂ /SiON Gate Stack for Advanced CMOS Devices

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Effect of Post Deposition Annealing on ALD-ZrO2/SiON Gate Stacks for Advanced CMOS Technology

Cited by 6 publications

References 18 publications

Atomic layer deposition of zirconium oxide thin film on an optical fiber for cladding light strippers

Atomic layer deposition of zirconium oxide thin film on an optical fiber for cladding light strippers

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO2/SiON Gate Stack for Advanced CMOS Devices

Argon Annealed ALD-ZrO 2 /SiON Gate Stack for Advanced CMOS Devices

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Product

Resources

About

Effect of Post Deposition Annealing on ALD-ZrO₂/SiON Gate Stacks for Advanced CMOS Technology

Structural and Electrical Characteristics of Oxygen Annealed ALD-ZrO₂/SiON Gate Stack for Advanced CMOS Devices

Argon Annealed ALD-ZrO ₂ /SiON Gate Stack for Advanced CMOS Devices