Effect of post deposition annealing of printed AlO&lt;inf&gt;x&lt;/inf&gt; film on PERC solar cells

Lin, Yung‐Sheng; Hung, Jui-Yi; Chen, Tsung-Cheng; Ku, Chen-Hao; Wang, Jung-Ching; Chen, Shian-Wen; Lee, Jen-Jiang; Wen, Ching-Chang

doi:10.1109/pvsc.2014.6924997

Cited by 2 publications

(3 citation statements)

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“…Al 2 O 3 films deposited by all of these methods have been shown to be capable of providing excellent passivation in recent years. Various other deposition techniques, including sol-gel [92]- [94] and screen-printed pastes [95], [96], have also been investigated, though so far with less impressive results.…”

Section: Industrial Application Of Al 2 Omentioning

confidence: 99%

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

Black

2016

Springer Theses

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High-efficiency crystalline silicon solar cells must suppress recombination at their p-type surfaces. Thin-film, amorphous aluminium oxide (Al 2 O 3) has been shown to provide very effective passivation of such surfaces, assisted by its negative fixed charge. However, many details of Al 2 O 3 passivation remain poorly understood. Furthermore, conventional means of depositing passivating Al 2 O 3 are too slow or too expensive to be suitable for high-volume commercial production. This thesis addresses these issues in three ways: 1) by contributing to a deeper understanding of semiconductor-dielectric interfaces and semiconductor surface recombination mechanisms in general, 2) by investigating the properties of Al 2 O 3 as a passivating dielectric for silicon surfaces, and 3) by demonstrating the viability of APCVD as a high-throughput, industrially compatible deposition method for Al 2 O 3 , enabling its application to commercial solar cells. Using Al 2 O 3 as a test case, it is shown how a novel analysis of the extended conductance method can be used to i) distinguish the separate contributions to the interface state distribution at a semiconductor-dielectric interface, and ii) determine their capture cross-sections for both minority and majority carriers. Furthermore, the direct link between these measured interface state properties and the recombination rate at the semiconductor surface is experimentally demonstrated by showing that the former can be used to accurately predict the latter. Investigations of the surface passivation properties of Al 2 O 3 reveal a remarkably consistent picture. It is shown that the properties of the Si-Al 2 O 3 interface states are essentially independent of the Al 2 O 3 deposition conditions and technique. The interface properties are found to be independent of the surface dopant concentration at boron-and phosphorus-doped surfaces, while recombination is shown to be only weakly dependent on surface orientation and morphology as a result of the remarkable orientation-independence of the Si-Al 2 O 3 interface state properties. Meanwhile, the chemical origin of the charge at the Si-Al 2 O 3 interface is elucidated by correlating FTIR and electrical measurements. xi xii APCVD is clearly shown-for the first time-to be capable of depositing Al 2 O 3 films with exceptional surface passivation properties, comparable to the best results achieved using other deposition techniques. In the best case, interface state densities as low as 5 × 10 10 eV −1 cm −2 at midgap, and negative fixed charge concentrations of 3.3 × 10 12 cm −2 are measured, resulting in a saturation current density of 7 fA cm −2 on undiffused p-type surfaces. The APCVD films are shown to be thermally stable under standard solar cell processing conditions and are demonstrated in large-area solar cells with peak efficiencies of 21.3 %. These results demonstrate the viability of APCVD Al 2 O 3 as a surface passivation layer for industrial silicon solar cells.

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Section: Industrial Application Of Al 2 Omentioning

confidence: 99%

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

Black

2016

Springer Theses

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“…These vacuum facilities, however, are costly and sometimes would deter cell manufacturers from starting a transition into the PERC industry. Some cost-effective methods for coating AlO x thin films have been developed, like sputtering, the sol-gel method, AlO x printing, and oxidation [7][8][9][10]. Li and Cuevas deposited an AlO x passivation layer using an rf magnetron sputtering method with an aluminum target sputtered in an oxygen ambient, obtaining a negative charge density of about -3 × 10 12 cm -2 [7].…”

Section: Introductionmentioning

confidence: 99%

“…An excellent surface passivation layer of AlO x with a negative charge density of −4:9 × 10 12 cm -2 was synthesized with a sol-gel method [9]. Lin et al used a printable AlO x paste to form a passivation layer on the back side of a solar cell and obtained a conversion efficiency of 20% [10].…”

Section: Introductionmentioning

confidence: 99%

Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation

Hsu

Lao

Wang

2023

International Journal of Photoenergy

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In this study, AlOx passivation layers on the rear sides of silicon PERC solar cells are formed by thermally oxidizing 3 nm-thick aluminum films deposited in advance by an e-gun evaporator. The oxidation process is conducted in a furnace full of oxygen at 400°C for a duration of 10 minutes, followed by annealing for a duration of 3 minutes at 700°C, and then the stacking of SiNx films on the back surfaces. After that, a second annealing process is done at 400°C for a duration of 10 minutes to repair the defects resulting from the bombardment of ions on the passivation layer. With the thermal oxidation method applied, we confirmed the existence of an AlOx passivation layer with a negative charge density of − 3.21 × 10 12 cm-2 for an annealed sample, in contrast to − 6.17 × 10 11 cm-2 for an unannealed sample.

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Effect of post deposition annealing of printed AlO<inf>x</inf> film on PERC solar cells

Cited by 2 publications

References 3 publications

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation

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