Appl. Phys. A
 2020
DOI: 10.1007/s00339-020-03565-8
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Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Ting‐Ting Li
1
,
Xiaolei Wang
2
,
Xiaobin He
3
et al.
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